Synthesis and Broadband Photodetection of a PвАРType 1D Van der Waals Semiconductor HfSnS3
Yang Lu,Wenzhi Yu,Yan Zhang,Junrong Zhang,Cheng Chen,Yongping Dai,Xingang Hou,Zhuo Dong,Liu Yang,Long Fang,Luyi Huang,Shenghuang Lin,Junyong Wang,Jun Wang,Jie Li,Kai Zhang
DOI: https://doi.org/10.1002/smll.202303903
IF: 13.3
2023-06-29
Small
Abstract:1D van der Waals pвАРtype semiconductor (indirect bandgap, вЙИ1.67 eV) ternary HfSnS3 with high quality is synthesized via a facile oneвАРstep chemical vapor transport method. HighвАРperformance photodetector based on HfSnS3 nanowires, which ascribed to the photoconductive effect, exhibits a broadband response with the spectrum from UV (275¬†nm) to nearвАРinfrared (808¬†nm). 1D¬†van der Waals (vdW) materials have attracted significant interest in recent years due to their giant anisotropic and weak interlayerвАРcoupled characters. More 1D vdW materials are urgently to be exploited for satisfying the practice requirement. Herein, the study of 1D vdW ternary HfSnS3 highвАРquality single crystals grown via the chemical vapor transport technique is reported. The Raman vibration modes and band structure of HfSnS3 are analyzed via DFT calculations. Its strong inвАРplane anisotropic is verified by the polarized Raman spectroscopy. The fieldвАРeffect transistors (FETs) based on the HfSnS3 nanowires demonstrate pвАРtype semiconducting behavior as well as outstanding photoresponse in a broadband range from UV to nearвАРinfrared (NIR) with short response times of вЙИ0.355¬†ms, high responsivity of вЙИ11.5¬†A¬†WвИТ1, detectivity of вЙИ8.2¬†√Ч¬†1011, external quantum efficiency of 2739%, excellent environmental stability, and repeatability. Furthermore, a typical photoconductivity effect of the photodetector is illustrated. These comprehensive characteristics can promote the application of the pвАРtype 1D vdW material HfSnS3 in optoelectronics.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology