Investigation of Power IR (850 nm) Light-Emitting Diodes Manufacturing by Lift-Off Technique of AlGaAs–GaAs-Heterostructure to Carrier-Substrate

A. V. Malevskaya,N. A. Kalyuzhnyy,F. Y. Soldatenkov,R. V. Levin,R. A. Salii,D. A. Malevskii,P. V. Pokrovskii,V. R. Larionov,V. M. Andreev
DOI: https://doi.org/10.1134/s1063784223080194
2024-03-16
Technical Physics
Abstract:Development of lift-off technique of AlGaAs/GaAs-heterostructures, grown by the Metalorganic vapour-phase epitaxy, to GaAs carrier-substrate using silver-containing paste or Au–In compound has been carried out. Forming process of frontal ohmic contact to GaAs n -type conductivity based on contact systems Au(Ge)/Ni/Au and Pd/Ge/Au with specific contact resistance (2–5) × 10 –6 Ω cm 2 has been investigated. Analyzed was the influence of heterostructure lift-off technique and forming process of frontal ohmic contact on the IR light-emitting diodes parameters: minimum light-emitting diodes (1 mm 2 square) series resistance was 0.16 Ω. Optical power 270 mW at current 1.5 A has been achieved.
physics, applied
What problem does this paper attempt to address?