All-Vacuum-Deposited Perovskite X-ray Detector with a Record-High Self-Powered Sensitivity of 1.2 C Gy –1 cm –3

Po-Ting Lai,Hao-Cheng Lin,Yung-Tang Chuang,Chien-Yu Chen,Wei-Kai Cheng,Guang-Hsun Tan,Bo-Wei Hsu,Lin Yang,Shiu-Cheng Lou,Li-Jen Chien,Hau-Wei Wang,Hao-Wu Lin
DOI: https://doi.org/10.1021/acsami.2c03114
2022-04-13
Abstract:Highly sensitive X-ray detection is crucial in, for example, medical imaging and secure inspection. Halide perovskite X-ray detectors are promising candidates for detecting highly energetic radiation. In this report, we describe vacuum-deposited Cs-based perovskite X-ray detectors possessing a p–i–n architecture. Because of the built-in potential of the p–i–n structure, these perovskite X-ray detectors were capable of efficient charge collection and displayed an exceptionally high X-ray sensitivity (1.2 C Gyair–1 cm–3) under self-powered, zero-bias conditions. We ascribe the outstanding X-ray sensitivity of the vacuum-deposited CsPbI2Br devices to their prominent charge carrier mobility. Moreover, these devices functioned with a lowest detection limit of 25.69 nGyair s–1 and possessed excellent stability after exposure to over 3000 times the total dose of a chest X-ray image. For comparison, we also prepared traditional spin-coated CH3NH3-based perovskite devices having a similar device architecture. Their volume sensitivity was only one-fifth of that of the vacuum-deposited CsPbI2Br devices. Thus, all-vacuum deposition appears to be a new strategy for developing perovskite X-ray detectors; with a high practical deposition rate, a balance can be reached between the thickness of the absorbing layer and the fabrication time.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.2c03114.X-ray attenuation abilities of CsPbI2Br, MAPbI3–xClx, crystalline Si, and amorphous selenium for different X-ray photon energies; AFM, SEM, HR-TEM, XRD, and XPS data of CsPbI2Br films; noise current of CsPbI2Br device and Keithley instrument; photocurrent density of CsPbI2Br device under exposure at a low dose rate; current density of CsPbI2Br device under exposure at 84.93 μGyair s–1 for 60 min; TPC time constants of CsPbI2Br and MAPbI3-xClx; various indices of X-ray detectors; and equations used for calculating charge carrier mobilities (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology
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