Investigation of optical, dielectric, and conduction mechanism in lead-free perovskite CsMnBr3

Moufida Krimi,Fadhel Hajlaoui,Mohammed S. M. Abdelbaky,Santiago Garcia-Granda,Abdallah Ben Rhaiem

DOI: https://doi.org/10.1039/d4ra01151a

IF: 4.036

2024-03-28

RSC Advances

Abstract:Metallic perovskites have advantageous optical and electrical properties, making them a valuable class of semiconductors for the manufacturing of solar cells. CsMnBr 3 is notable among them due to its important optical characteristics. The electrical and dielectric characteristics as a semiconductor are examined in this study. Direct transitions with a 3.29 eV bandgap and an Urbach energy of 0.96 eV are revealed by the results. Through AC conductivity, it demonstrated semiconductor characteristics at 443 K. The dielectric loss varied with frequency and peaked at high frequencies. Furthermore, as temperature rose, a relaxation peak in the electrical modulus was seen to migrate to higher frequencies. Ac conductivity is described by the double power law expression. The conduction in our compound is governed by small polaron tunneling. Based on the optical results reported in the bibliography for this sample, we realize the importance of examining the electrical characteristics to comprehend the semiconductor behavior of CsMnBr 3 .

chemistry, multidisciplinary

What problem does this paper attempt to address?

The problem this paper attempts to address is the strict limitations on lead-based perovskite materials due to their harmful effects on human health, animal health, and the environment, as well as their poor long-term stability. To tackle these challenges, researchers are dedicated to designing stable lead-free perovskite materials for various green energy applications, particularly photovoltaic solar cells.

Specifically, the paper focuses on the electrical and dielectric properties of the lead-free perovskite material CsMnBr₃. By analyzing the conductivity and dielectric properties of CsMnBr₃ under different temperature and frequency conditions, the researchers aim to gain a deeper understanding of the semiconductor behavior of this material, thereby providing theoretical support for its application in optoelectronic devices.

The main research contents include:
1. **Optical Properties**: Through UV-Vis spectroscopy analysis, the bandgap of CsMnBr₃ was determined to be 3.29 eV, and an Urbach energy of 0.96 eV was observed.
2. **Electrical Properties**: Through AC conductivity measurements, it was found that CsMnBr₃ exhibits semiconductor characteristics at 443 K. Additionally, impedance spectroscopy analysis was used to study the contributions of grains and grain boundaries to charge transport.
3. **Dielectric Properties**: By studying the dielectric constant and dielectric modulus, the dielectric response of CsMnBr₃ at different frequencies and temperatures was explored.

In summary, this paper aims to reveal the electrical and dielectric properties of CsMnBr₃ through systematic research, providing important scientific evidence for its application in optoelectronic devices.