Experimental and theoretical study on the facet‐dependent SERS activity of α‐Fe2O3 films

Yifan Wang,Peipei Wen,Lengyuan Niu,Yang Chen,Yuwei Luo,Yinyan Gong,Can Li,Shiqing Xu

DOI: https://doi.org/10.1002/jrs.6659

IF: 2.727

2024-02-08

Journal of Raman Spectroscopy

Abstract:The intrinsic weak SERS activity limited the further development of semiconductor substrates. Here, the α‐Fe2O3 films with high {11 ̄0 } and {110 } facet exposure ratios were fabricated through an electrodeposition method, which show excellent SERS properties and uniformity. The ultraviolet photoelectron spectroscopy analysis and first principles calculations further indicate that the SERS mechanism is realized through the charge transfer between substrate and probe molecules. Semiconductors have attracted great attention for surface‐enhanced Raman scattering (SERS) applications due to their rich variety, adjustable band structure, good chemical stability, and biocompatibility. However, their intrinsic weak SERS activity limited the further development of semiconductor substrates. Here, the α‐Fe2O3 films with high {11 ̄0 } and {110 } facet exposure ratios were fabricated through an electrodeposition method with the existence of NH4Cl and CH3COONa. The α‐Fe2O3{11 ̄0 } and α‐Fe2O3{110 } films show excellent SERS properties with enhancement factor of 4.155×103 and 5.481×103, as well as the relatively low limit of detection down to 2 × 10−7 M for 4‐nitrobenzenethiol. Meanwhile, the lower relative standard deviation values (<10%) confirm the well uniformity of as‐prepared substrates. Ultraviolet photoelectron spectroscopy analysis reveals that the α‐Fe2O3{110 } possesses the lower work function, which could guarantee the efficient interfacial charge transfer between substrates and probe molecules. Moreover, first principles calculations further indicates that the charge transfer efficiency on {110 } facet can be effectively improved, and thus significantly enhance the SERS activity of α‐Fe2O3. The current study provides a strategy for the fabrication and application of semiconductor‐based SERS substrates.

spectroscopy