Abstract:Photonic integrated circuits (PICs) based on lithographically patterned waveguides provide a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a wide range of photonic technologies with desired complexity and stability. While the next generation of applications such as ultra-high speed optical transceivers, neuromorphic computing and terabit-scale communications demand further lower power consumption and higher operating frequency. Complementing the leading silicon-based material platforms, the third-generation semiconductor, silicon carbide (SiC), offers a significant opportunity toward the advanced development of PICs in terms of its broadest range of functionalities, including wide bandgap, high optical nonlinearities, high refractive index, controllable artificial spin defects and complementary metal oxide semiconductor-compatible fabrication process. The superior properties of SiC have enabled a plethora of nano-photonic explorations, such as waveguides, micro-cavities, nonlinear frequency converters and optically-active spin defects. This remarkable progress has prompted the rapid development of advanced SiC PICs for both classical and quantum applications. Here, we provide an overview of SiC-based integrated photonics, presenting the latest progress on investigating its basic optoelectronic properties, as well as the recent developments in the fabrication of several typical approaches for light confinement structures that form the basic building blocks for low-loss, multi-functional and industry-compatible integrated photonic platform. Moreover, recent works employing SiC as optically-readable spin hosts for quantum information applications are also summarized and highlighted. As a still-developing integrated photonic platform, prospects and challenges of utilizing SiC material platforms in the field of integrated photonics are also discussed.

Power-efficient programmable integrated multiport photonic interferometer in CMOS-compatible silicon nitride

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

Silicon Photonic Network-on-chip and Enabling Components

SiN integrated photonic components in the Visible to Near-Infrared spectral region

Silicon carbide for integrated photonics

Development of Silicon Photonic Devices for Optical Interconnects

Fabrication of Ultra-Low-Loss, Dispersion-Engineered Silicon Nitride Photonic Integrated Circuits via Silicon Hardmask Etching

Extending the spectrum of fully integrated photonics

Silicon nitride integrated photonics from visible to mid-infrared spectra

High-speed programmable photonic circuits in a cryogenically compatible, visible-NIR 200 mm CMOS architecture

High-performance lasers for fully integrated silicon nitride photonics

Three-dimensional integration enables ultra-low-noise, isolator-free Si photonics

Efficient mass manufacturing of high-density, ultra-low-loss Si_3N_4 photonic integrated circuits

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform

Integrated Microwave Photonics on Silicon-On-Insulator Platform

Review of Recent Progress on Silicon Nitride-Based Photonic Integrated Circuits

300-Nm-thick, Ultralow-Loss Silicon Nitride Photonic Integrated Circuits by 8-In. Foundry Production

Extending the spectrum of fully integrated photonics to submicrometre wavelengths

Silicon rich nitride-lithium niobate on insulator platform for photonics integrated circuits

Design and Characterization of Integrated Components for SiN Photonic Quantum Circuits.