Abstract:Objective Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention due to their uniquely controllable properties. Their strong excitonic effects dominate the optical and electronic responses in 2D-TMDs. Coulomb interactions among carriers in the exciton formation process give rise to many interesting many-body effects, which affect the exciton resonance energy and subsequent exciton decay. Despite extensive efforts, a detailed discussion of many-body effects during the exciton formation process is still absent. Typically, narrow-band laser excitation was used in previous studies to inject free electron-hole pairs with energy greater than the lowest exciton resonance energy. In contrast, broadband excitation is helpful to exploit the strong exciton absorption and improve the time-resolution in transient experiments. How do multibody effects induced by broadband excitation influence the exciton resonance and exciton formation when high-density carriers are injected? The answer is essential for the understanding of the exciton properties and is helpful to design and control the photoelectric response of 2D-TMDs. Here we report the use of transient absorption spectroscopy with 10 fs time-resolution to address the ultrafast spectral response of many-body effects in the formation of the lowest exciton at the K valley in five -layer MoS2. Methods Multilayer MoS2 samples were prepared by chemical vapor deposition. In the transient absorption spectrum intensity (DA) measurements, an 800-nm pulse (1 kHz, 35 fs) output from an amplified Ti: sapphire laser system was first spectrally broadened using self-phase modulation via a hollow core fiber filled with noble gas, and the pulse duration was compressed with a set of chirped mirrors. Then, the 800 nm pulse was used to construct the degenerate pump-probe system [ Fig. 1 ( a)]. The pulse energies and their polarizations were adjusted by a combination of a half-wave plate and a polarizer. The.AA signal was obtained by measuring the differential absorbance change,AA = Ig( 1 + OT/T), where,A T/T = (Too To) / To, Too and T011 are the intensities of the transmitted probe light passing through the sample with and without pump excitation, respectively. The time resolution for this apparatus is 10 fs, determined by an autocorrelation trace between the broadband pump and probe pulses [Fig. 1 ( b). During this experiment, pump light was polarized vertically compared with the probe light. The focal spot diameters of the pump and probe beams are 400 and 200 ttm, respectively. The Raman spectral measurement indicates that the sample has five layers [Fig. 2( b)]. Fluence dependence studies confirm that excitation in our experiments occurs in the linear regime. Results and Discussions The broadband laser excitation results in two ground state bleachings ( GSB) due to transitions of excitons A and B [Fig. 2( a)] in.AA spectra [ Figs. 3( a) and 3 ( b)]. The time evolutions of both signals appear to be biphasic, and their global exponential fitting results indicate that the two processes are due to carrier thermalization and cooling, respectively, during the relaxation before the formation of the lowest exciton phase [Fig. 3( c). With carrier relaxation, the intense many-body effects lead to an obvious temporal evolution of exciton resonance, which can be discerned from the first moment trace. The moment traces of two excitons exhibit a similar initial fast red-shift, followed by a slow blue-shift (Figs. 4 and 5). The initial red -shift takes place within 50 fs, and the blue-shift is almost finished before 2 ps. Therefore, the exciton resonance positions at 50 fs and 2 ps were extracted as a function of pump power [Figs. 4(c) and 4( d)] and sample temperature [Figs. 5( c) and 5(d)]. The red -shift amplitude increases with increasing pump power and decreases with increasing temperature. For the blue -shift, it decreases with both pump power and sample temperature. The initial red -shift is likely due to the reduction of the repulsive Coulomb interaction between the charges of the same signs, which results in band gap renormalization ( BGR). In the following slow process, incomplete compensation of BGR and band -filling effects produce the blue-shift of exciton resonance. The temporal evolution of exciton resonance is further fitted using a biexponential function [Figs. 4(e), 4(f), 5(e) and 5(f)]. The results demonstrate that the duration of BGR effect is nearly constant with increasing pump power, whereas, that of the band -filling effect is appreciably prolonged with increasing laser power and sample temperature. This may be due to the hot-phonon effect during the band filling process. Conclusions Femtosecond transient absorption spectroscopy was used to study the optical response of the multibody effect among carriers during the lowest exciton formation process at the K-valley in multilayer MoS2. Many-body effects on exciton resonance occur along with carrier relaxation. The resonance positions of two excitons demonstrate an early instantaneous red -shift and a subsequent slow blue -shift. The red -shift amplitude increases with increasing pump power and decreases with increasing sample temperature. The amplitude of the red -shift reflects the modulation of BGR effect among early free carriers. The blue-shift amplitude after the lowest exciton formation is reduced with increasing laser power and sample temperature. The duration of the BGR effect is almost insensitive to laser power and sample temperature, whereas, that of the band-filling effect is prolonged. Beyond the fundamental interests in physics, the observation of temporal evolution of exciton resonance is helpful to develop effective methods to dynamically control the photoelectric responses of 2D-TMDs.

Interactions and ultrafast dynamics of exciton complexes in a monolayer semiconductor with electron gas

Ultrafast Terahertz Probe of Transient Evolution of Charged and Neutral Phase of Photoexcited Electron-hole Gas in Monolayer Semiconductor

Coupled Relaxation Channels Of Excitons In Monolayer Mose2

Short excitonic lifetimes of MoSe 2 monolayers grown by molecular beam epitaxy on the hexagonal boron nitride

Excitonic Transport and Intervalley Scattering in Exfoliated MoSe2 Monolayer Revealed by Four-Wave-Mixing Transient Grating Spectroscopy

Influence of Interlayer Interactions on the Relaxation Dynamics of Excitons in Ultrathin MoS2.

Exciton-exciton Interaction in Monolayer MoSe$_2$ from Mutual Screening of Coulomb Binding

Electron recoil effect in electrically tunable MoSe2 monolayers

Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry

Direct measurement of key exciton properties: energy, dynamics and spatial distribution of the wave function

Time-dependent screening explains the ultrafast excitonic signal rise in 2D semiconductors

Exciton-exciton Annihilation in MoSe2 Monolayers

Ultrafast transition between exciton phases in van der Waals heterostructures

Ultrafast Electron and Hole Relaxation Pathways in Few-Layer Mos2

Excitonic interactions and mechanism for ultrafast interlayer photoexcited response in van der Waals heterostructures

Ultrafast Spectral Response of Many-Body Effects During Exciton Formation in Multilayer MoS2

Steady-state nonlinear optical response of excitons in monolayer MoSe$_2$

Local field effects in ultrafast light-matter interaction measured by pump-probe spectroscopy of monolayer MoSe$_{\boldsymbol 2}$

Ultrafast dynamics of bright and dark excitons in monolayer WSe$_2$ and heterobilayer WSe$_2$/MoS$_2$

Population Pulsation Resonances of Excitons in MonolayerMoSe2with Sub-1 Μevlinewidths

Time-domain observation of interlayer exciton formation and thermalization in a MoSe$_2$/WSe$_2$ heterostructure