Light‐Induced Dynamic Activation of Copper/Silicon Interface for Highly Selective Carbon Dioxide Reduction

Jiali Wang,Tai Ying Lai,Han-Ting Lin,Tsung-Rong Kuo,Hsiao-Chien Chen,Chun-Sheng Tseng,Ching-Wei Tung,Chia-Ying Chien,Hao Ming Chen
DOI: https://doi.org/10.1002/anie.202403333
2024-05-26
Angewandte Chemie International Edition
Abstract:Numerous studies have shown a fact that phase transformation and/or reconstruction are likely to occur and play crucial roles in electrochemical scenarios. Nevertheless, a decisive factor (such as facet, phase etc.) behind the diverse photoelectrochemical activity and selectivity of various copper/silicon photoelectrodes is still largely debated and missing in the community, especially for possibly dynamic behaviors of metal catalyst/semiconductor interface. Herein, through in situ X-ray absorption spectroscopy and transmission electron microscope, a model system of Cu nanocrystals with well-defined facets on black p-type silicon (BSi) is demonstrated to unprecedentedly reveal the dynamic phase transformation of forming irreversible silicide at Cu nanocrystal-BSi interface, which is validated to originate from the atomic interdiffusion between Cu and Si driven by light-induced dynamic activation process. The presence of in situ formed silicide can significantly enhance photovoltage and deliver a record-high onset potential above -0.4 V versus reversible reference electrode (RHE) for photoelectrochemical CH4 production. Significantly, the adaptive junction at Cu/Si interface is activated by an expansion of interatomic Cu-Cu distance, which efficiently restricts the C-C coupling pathway but strengthens the bonding with key intermediate of *CHO for CH4 yield, resulting in a remarkable 16-fold improvement in the product ratio of CH4/C2 products.
chemistry, multidisciplinary
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