Efficient solution-processed NIR-PLEDs doped with one [Ir(C^N)(C'^N')(N''^O)- tris -heteroleptic Ir(III)-complex NIR-phosphor

Zhiming Zhang,Youquan Chen,Xinyu Dong,Xingqiang Lü,Guorui Fu
DOI: https://doi.org/10.1016/j.jlumin.2024.120852
IF: 3.6
2024-08-19
Journal of Luminescence
Abstract:Among reliable solution-processed NIR-OLEDs/PLEDs doped with NIR-emissive iridium(III)-complexes, high-performance fully-solution-processed NIR-PLEDs remain a great challenge. Herein, through the C–H activation of IrCl 3 ⋅3H 2 O ( Method A ) or [Ir(COD)(Cl)] 2 ( Method B ) with equimolar amount of the Hiqbt (HC^N) and Hdpqx (HC'^N') ligands, and the subsequent metalation with the N"^OH-ancillary ligand Hpbi , a new [Ir(C^N)(C'^N')(N''^O)]- tris -heteroleptic Ir(III)-complex [Ir(iqbt)(dpqx)(pbi)] (a relatively higher total yield of 41 % from Method B than that (19 %) from Method A ) was obtained. Besides the NIR-emission ( λ PL = 710 nm) responsible from the highly conjugated Hiqbt ligand, its short T 1 -decayed lifetime of 0.48 μs while the large Φ PL of 0.37, are confirmed to correlate with the robust and low-symmetry geometry structure in the premise of T 1 -nature of 3 LC/ 3 MLCT-admixed transitions with the 3 ILCT-dominant ( Hiqbt ; 74.49 %). Moreover, through the low-cost solution-processing or fully-solution-processing, the [Ir(iqbt)(dpqx)(pbi)] doped NIR-PLED-A or NIR-PLED-B was realized, respectively, whose high-performance ( η EQE Max = 6.61 % versus 5.31 %; λ EL = 706/707 nm) should be resulted from the equivalent carries' injection/transport from TmPyPB-assisted LiF/Al cathode while Ba/Al cathode.
optics
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