Abstract:Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs), with their atomic thicknesses, high carrier mobility, fast charge transfer, and intrinsic spin-valley couplings, have been demonstrated one of the most appealing candidates for next-generation electronic and optoelectronic devices. The synthesis of TMDs with well-controlled crystallinity, quality and composition is essential to fully realize their promising applications. Similar to that in III-V semiconductor synthesis, the precise precursor supply is a precondition for controllable growth of TMDs. Although great efforts have been devoted to modulate the transition metal supply, few effective methods of chalcogen feeding control were developed. Herein we report a strategy of using active chalcogen monomer supply to grow TMDs and their alloys in a robust and controllable manner. It is found that at a high temperature, the active chalcogen monomers (such as S, Se, Te atoms or their mixtures) can be controllably released from metal chalcogenides and, thus, enable the synthesis of TMDs (MX2, M = Mo, W; X = S, Se, Te) with very high quality, e.g., MoS2 monolayers exhibit photoluminescent circular helicity of ~92%, comparable to the best exfoliated single-crystal flakes and close to the theoretical limit of unity. More intriguingly, a uniform quaternary TMD alloy with three different anions, i.e., MoS2(1-x-y)Se2xTe2y, was accomplished for the first time. Our mechanism study revealed that the active chalcogen monomers can bind and diffuse freely on a TMD surface, which enables the effective nucleation and reaction, quick chalcogen vacancy healing, and alloy formation during the growth. The chalcogen monomer supply strategy offers more degrees of freedom for the controllable synthesis of 2D compounds and their alloys, which will greatly benefit the development of high-end devices with desired 2D materials.

Synthesis and Modulation of Low-Dimensional Transition Metal Chalcogenide Materials via Atomic Substitution

Modulation of electronic state in copper-intercalated 1T-TaS 2

Space-confined and Substrate-Directed Synthesis of Transition-Metal Dichalcogenide Nanostructures with Tunable Dimensionality.

Atomically Substitutional Engineering of Transition Metal Dichalcogenide Layers for Enhancing Tailored Properties and Superior Applications

Topological transformation from non-van der Waals solids to 2D transition metal chalcogenides in molten salts with solvated metals

Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures

A library of atomically thin metal chalcogenides

Phase-Controlled 1T Transition-Metal Dichalcogenide-Based Multidimensional Hybrid Nanostructures

General Strategy for Two-Dimensional Transition Metal Dichalcogenides by Ion Exchange

Quasi-One-Dimensional van der Waals Transition Metal Trichalcogenides

Controllable Thin-Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

Interlayer Chemical Modulation of Phase Transitions in Two-Dimensional Metal Chalcogenides

Enhanced Performance of In-Plane Transition Metal Dichalcogenides Monolayers by Configuring Local Atomic Structures.

Strain-Tuning Atomic Substitution In Two-Dimensional Atomic Crystals

Robust synthesis of two-dimensional metal dichalcogenides and their alloys by active chalcogen monomer supply

Atomic Insights into Phase Evolution in Ternary Transition-Metal Dichalcogenides Nanostructures.

Modulation of electronic state in copper-intercalated 1T-TaS2

Modulating The Atomic And Electronic Structures Through Alloying And Heterostructure Of Single-Layer Mos2

Quasi-Binary Transition Metal Dichalcogenide Alloys: Thermodynamic Stability Prediction, Scalable Synthesis, and Application

Physical and chemical tuning of two-dimensional transition metal dichalcogenides.

Host–Guest Intercalation Chemistry for the Synthesis and Modification of Two‐Dimensional Transition Metal Dichalcogenides