Metal-semiconductor 1T/2H-MoS2 by a heteroatom-doping strategy for enhanced electrocatalytic hydrogen evolution

Yimin Jiang,Sihan Li,Fusheng Zhang,Weiyi Zheng,Liubin Zhao,Qingliang Feng
DOI: https://doi.org/10.1016/j.catcom.2021.106325
IF: 3.51
2021-08-01
Catalysis Communications
Abstract:<p>Complicated synthesis procedure and instability of 1T-MoS<sub>2</sub> impede its practical application for hydrogen evolution reaction. Here, we propose a new strategy to drive the synthesis of stabilized 1T-MoS<sub>2</sub> by Ni doping. Ni doping forms the NiS covalent bonds, inducing the slip of S atoms and stabilizing 1T structure. The materials were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Electrochemical tests including linear sweep voltammetry etc. indicate that the 1T/2H-MoS<sub>2</sub>/8%Ni has an overpotential of 162 mV and a Tafel slope of 80 mV dec<sup>−1</sup> along with a good stability.</p>
chemistry, physical
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