An Overview of AI-Assisted Design-on-Simulation Technology for Reliability Life Prediction of Advanced Packaging
Sunil Kumar Panigrahy,Yi-Chieh Tseng,Bo-Ruei Lai,Kuo-Ning Chiang
DOI: https://doi.org/10.3390/ma14185342
IF: 3.4
2021-09-16
Materials
Abstract:Several design parameters affect the reliability of wafer-level type advanced packaging, such as upper and lower pad sizes, solder volume, buffer layer thickness, and chip thickness, etc. Conventionally, the accelerated thermal cycling test (ATCT) is used to evaluate the reliability life of electronic packaging; however, optimizing the design parameters through ATCT is time-consuming and expensive, reducing the number of experiments becomes a critical issue. In recent years, many researchers have adopted the finite-element-based design-on-simulation (DoS) technology for the reliability assessment of electronic packaging. DoS technology can effectively shorten the design cycle, reduce costs, and effectively optimize the packaging structure. However, the simulation analysis results are highly dependent on the individual researcher and are usually inconsistent between them. Artificial intelligence (AI) can help researchers avoid the shortcomings of the human factor. This study demonstrates AI-assisted DoS technology by combining artificial intelligence and simulation technologies to predict wafer level package (WLP) reliability. In order to ensure reliability prediction accuracy, the simulation procedure was validated by several experiments prior to creating a large AI training database. This research studies several machine learning models, including artificial neural network (ANN), recurrent neural network (RNN), support vector regression (SVR), kernel ridge regression (KRR), K-nearest neighbor (KNN), and random forest (RF). These models are evaluated in this study based on prediction accuracy and CPU time consumption.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering