Investigation of structural and optoelectronic properties of BaThO3

G. Murtaza,Iftikhar Ahmad,B. Amin,A. Afaq,M. Maqbool,J. Maqssod,I. Khan,M. Zahid

DOI: https://doi.org/10.1016/j.optmat.2010.10.052

IF: 3.754

2011-01-01

Optical Materials

Abstract:Structural and optoelectronic properties of BaThO3 cubic perovskite are calculated using all electrons full potential linearized augmented plane wave (FP-LAPW) method. Wide and direct band gap, 5.7eV, of the compound predicts that it can be effectively used in UV based optoelectronic devices. Different characteristic peaks in the wide UV range emerges mainly due to the transition of electrons between valance band state O-p and conduction band states Ba-d, Ba-f, Th-f and Th-d.

materials science, multidisciplinary,optics