Abstract:The fine tuning of electro optic properties is critical for high performing technologies. This is now obtainable with advanced nanostructures, particularly 2D monolayer materials such as molybdenum disulfide (MoS2). Using spin-polarized periodic density functional theory (DFT), we find the direct band gap (K→K') can be chemically tuned with covalently bound functional groups. With an electron withdrawing group such as fluorine, we observe one occupied α and one unoccupied β bands, which correspond to the addition of an α electron and a β hole; confirmed with the spin difference (Qα-Qβ) being 1. By increasing the electron donating behavior with replacement of F by H and then by Me, the occupied (valence) α band shifts upwards in energy relative to the Fermi energy, and the unoccupied β shifts down until they are in contact with the Fermi energy. In addition, both the α and β unoccupied (conduction) bands of the MoS2 shift down, relative to the Fermi energy, until in contact with the Fermi and the system can be described as metallic. The MoS2+F system is thus a small gap semiconductor (0.96 eV), and the MoS2+H and MoS2+Me gaps are 0.21 eV and 0 eV (metallic), respectively. Spin density calculations illustrate the semi localized nature of the α spin, however this is not formed from the radical of the functionalizing group, but rather, the resulting unpaired electron is on the sulfur atom after radical abstraction to form a covalent bond with the group. 5 and 6 membered heterocycles were studied and further confirm these observations. Distinct from typical functional groups such as phenyl, we find evidence for the covalent bonding of pyrrole, cyclopentadiene and pyridine to a sulfur atom of the MoS2 surface, from the new α and β bands in the band structure. The charge carrier nature of the 2D monolayers of functionalized MoS2 can be further tuned with charge doping (hole or electron), such that even the metallic systems can be returned to semiconducting states, but importantly, as p type conductors. Semi localization of the spin states and control of the band gap can be generalized to other covalently functionalized 2D materials and appears suitable for electronics applications, such as photoluminescence devices, contact-free transistors and quantum communication.

Band Gap Engineering in Two-Dimensional Materials by Functionalization: Methylation of Graphene and Graphene Bilayers

Disorder Imposed Limits of Mono- and Bilayer Graphene Electronic Modification Using Covalent Chemistry.

Spectroscopy of Covalently Functionalized Graphene

Tuning properties of layered materials based on hexagonal boron nitride by methylation: A density functional theory study

Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices

Spin-orbit coupling in methyl functionalized graphene

Mechanical and Electrical Properties of Modified Graphene Devices

Stability and electronic structure of covalently functionalized graphene layers

The synergistic regulation effect on the structure and electronic properties of graphene by methane plasma, Stone-Wales defect and equibiaxial strain

Electric and thermoelectric properties of graphene bilayers with extrinsic impurities under applied electric field

Covalent bulk functionalization of graphene

Organometallic Hexahapto-Functionalized Graphene: Band Gap Engineering with Minute Distortion to the Planar Structure

Bandgap engineering of two-dimensional C3N bilayers

Bandgap tunability at single-layer molybdenum disulphide grain boundaries

Control of Charge Carriers and Band Structure in 2D Monolayer Molybdenum Disulfide via Covalent Functionalization.

Graphether: A Two-Dimensional Oxocarbon as a Direct Wide-Gap Semiconductor with High Mechanical and Electrical Performances

Electrochemical regulation of the band gap of single layer graphene: from semimetal to semiconductor

Work Function Engineering of Graphene

Tuning the properties of graphene using a reversible gas-phase reaction

Band structure modulation by methoxy-functionalization of graphene nanoribbons

An Alternative Strategy to Control the Electronic Properties of Bilayer Graphene: Semi-metal to Metal Transition and a 2D Material with Dirac Cone