Abstract:Moore Law states that transistor density will double every two years, which is sustained until today due to continuous multi-directional innovations, such as extreme ultraviolet lithography, novel patterning techniques etc., leading the semiconductor industry towards 3nm node and beyond. For any patterning scheme, the most important metric to evaluate the quality of printed patterns is EPE, with overlay being its largest contribution. Overlay errors can lead to fatal failures of IC devices such as short circuits or broken connections in terms of P2P electrical contacts. Therefore, it is essential to develop effective overlay analysis and control techniques to ensure good functionality of fabricated semiconductor devices. In this work we have used an imec N14 BEOL process flow using LELE patterning technique to print metal layers with minimum pitch of 48nm with 193i lithography. FF structures are decomposed into two mask layers (M1A and M1B) and then the LELE flow is carried out to make the final patterns. Since a single M1 layer is decomposed into two masks, control of overlay between the two masks is critical. The goal of this work is of two-fold as, (a) to quantify the impact of overlay on capacitance and (b) to see if we can predict the final capacitance measurements with selected machine learning models at an early stage. To do so, scatterometry spectra are collected on these electrical test structures at (a)post litho, (b)post TiN hardmask etch, and (c)post Cu plating and CMP. Critical Dimension and overlay measurements for line-space pattern are done with SEM post litho, post etch and post Cu CMP. Various machine learning models are applied to do the capacitance prediction with multiple metrology inputs at different steps of wafer processing. Finally, we demonstrate that by using appropriate machine learning models we are able to do better prediction of electrical results.

Machine Learning for Semiconductor Process Simulation Described by Coupled Partial Differential Equations

A Physics-Informed Neural Networks Algorithm for Simulating Semiconductor Devices

Scientific Machine Learning Enables Multiphysics Digital Twins of Large-Scale Electronic Chips

Accelerating Chip Design with Machine Learning: from Pre-Silicon to Post-Silicon

Development of Convolutional Neural Network Based Gaussian Process Regression to Construct a Novel Probabilistic Virtual Metrology in Multi-Stage Semiconductor Processes

Just-In-Time Modeling with Variable Shrinkage Based on Gaussian Processes for Semiconductor Manufacturing

Convolutional Neural Networks for Multi-Stage Semiconductor Processes

Machine Learning for 3D-IC Electric-Thermal Simulation and Management

Improving Semiconductor Device Modeling for Electronic Design Automation by Machine Learning Techniques

Mapping Oxidation and Wafer Cleaning to Device Characteristics Using Physics-Assisted Machine Learning

Neural Approach for Modeling and Optimizing Si-MOSFET Manufacturing

Improvement of TCAD Augmented Machine Learning Using Autoencoder for Semiconductor Variation Identification and Inverse Design

Applying Machine Learning Models on Metrology Data for Predicting Device Electrical Performance

Bridging TCAD and AI: Its Application to Semiconductor Design

Machine Learning based CVD Virtual Metrology in Mass Produced Semiconductor Process

A Thermal Machine Learning Solver For Chip Simulation

Benchmarking of Machine Learning Methods for Multiscale Thermal Simulation of Integrated Circuits

Physics-Informed Learning Based Multiphysics Simulation for Fast Transient TSV Electromigration Analysis

A survey on machine and deep learning in semiconductor industry: methods, opportunities, and challenges

A Deep Learning framework for simulation and defect prediction applied in microelectronics

Methods and applications of machine learning in computational design of optoelectronic semiconductors