Abstract:Silicon-based neural probes are practical tools for recording neural cell firing. A single silicon- based needle with a width of only 70 mu m, prepared using the standard complementary metal-oxide- semiconductor (CMOS) process technology, can contain thousands of electrode-recording sites. Optogenetics has made control over neuronal activity more precise. By recording the electrical activity of neurons stimulated by light, more information about brain activity can be recorded and analyzed. When yellow light or blue light is used to stimulate neurons, the photon energy is greater than the forbidden bandwidth of the silicon substrate, and the valence-band electrons are excited to the conduction band, generating electron-hole pairs. The photoinduced carrier in the silicon substrate severely disrupts the probe's signal-to-noise ratio. Decreasing the disturbance caused by light is a pragmatic way to execute recording and stimulating simultaneously. The traditional noise reduction method involves using heavily doped silicon as the substrate, reducing the carrier life by increasing the impurity concentration, and then reducing the noise of the silicon electrode under illumination. However, the heavily doped silicon substrate has more lattice defects than its lightly doped counterparts, which makes the silicon electrode fragile, and this method is not compatible with the standard CMOS process technology. On analyzing the photoinduced noise mechanism of manufacturing electrodes on lightly doped silicon substrates, we found that the inhomogeneous distribution of carriers generated by light excitation polarizes lightly doped silicon substrates. The potential caused by photoinduced polarization will affect the electrodes fabricated on it. Metalizing and grounding the lightly doped silicon substrate will effectively decrease the polarization potential. On using this method, the noise amplitude caused by the illumination can drop to 0.87% of the original value. To ensure an appropriate firing rate of neurons, the photo-stimulation frequency was chosen to be 20 Hz. Under the illumination of 1 mW.mm(-2), the background noise of the electrode could be controlled below 45 mu V, which meets the needs for general optogenetics applications. Modification of the lightly doped silicon substrate will meet the requirements of the neural electrode for optogenetics applications. Unlike the traditional method of reducing light-induced noise by heavily doping the entire substrate, the noise reduction method of lightly doped silicon substrate is compatible with the standard CMOS process technology. It provides a noise cancellation method for the preparation of silicon-based neural microelectrodes with dense recording sites and high channel count using standard CMOS processes.

Noise mitigation strategies for silicon-based active neural optrode

A Silicon Neural Optrode with Noise Mitigation Structure for High-Fidelity Neural Recording

An Active Neural Optrode with Metal Shielding Laser Diode and Electrochemical Modified Microelectrodes for Low Noise Optogenetics

An artefact-resist optrode with internal shielding structure for low-noise neural modulation

Light-Induced Noise Reduction of Lightly Doped Silicon-based Neural Electrode

Neuromodulation with Submillimeter Spatial Precision by Optoacoustic Fiber Emitter

Double-Sided Sapphire Optrodes with Conductive Shielding Layers to Reduce Optogenetic Stimulation Artifacts

Sapphire-Based Optrode for Low Noise Neural Recording and Optogenetic Manipulation

An Integrated Neural Optrode with Modification of Polymer-Carbon Composite Films for Suppression of the Photoelectric Artifacts

The Use of a Double-Layer Platinum Black-Conducting Polymer Coating for Improvement of Neural Recording and Mitigation of Photoelectric Artifact

A Polyimide-Based Flexible Optoelectrodes for Low-Noise Neural Recording

A Silicon Diode based Optoelectronic Interface for Bidirectional Neural Modulation

In Vivo Optogenetic Modulation with Simultaneous Neural Detection Using Microelectrode Array Integrated with Optical Fiber

Flexible Neural Probes with Electrochemical Modified Microelectrodes for Artifact-Free Optogenetic Applications

A 4-Channel Optogenetic Stimulation, 16-Channel Recording Neuromodulation System with Real-Time Micro-LED Detection Function

A silicon diode-based optoelectronic interface for bidirectional neural modulation

Development and Application of Nano-Optogenetic Probes

On-Probe Neural Interface ASIC for Combined Electrical Recording and Optogenetic Stimulation

A CMOS-based Neural Implantable Optrode for Optogenetic Stimulation and Electrical Recording

Silicon Diode based Flexible and Bioresorbable Optoelectronic Interfaces for Selective Neural Excitation and Inhibition