Trap engineering using oxygen-doped graphitic carbon nitride for high-performance perovskite solar cells

Yaling Lei,Xiaoyan Li,Jingying Liang,Yunhao Wei,Pingli Qin,Hong Tao,Jianjun Chen,Zuojun Tan,Hongwei Lei
DOI: https://doi.org/10.1039/d3tc01711g
IF: 6.4
2023-06-20
Journal of Materials Chemistry C
Abstract:Trap-assisted non-radiative recombination is one of the main energy loss pathways in metal halide perovskite solar cells (PVSCs). Here in this work, oxygen-doped graphitic carbon nitride (g-C3N4-O) is introduced into the commonly used SnO2 electron transport layer (ETL) as an additive to engineer the traps at the ETL/perovskite interface. The interaction between the g-C3N4-O and the SnO2 could effectively and simultaneously mitigate the uncoordinated Sn dangling bonds and the -OH groups which are the two dominant deep-traps at the ETL/perovskite interface. Trap-engineered PVSCs show optimized electrical properties with matched energy band alignment, improved electron transport and extended carrier lifetime. As a result, binary PVSCs modified with g-C3N4-O achieve a champion power conversion efficiency of over 21% and demonstrate high environmental stability.
materials science, multidisciplinary,physics, applied
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