Large-Area Flexible Printed Thin-Film Transistors with Semiconducting Single-Walled Carbon Nanotubes for NO 2 Sensors
Xin Wang,Miaomiao Wei,Xiaoqian Li,Shuangshuang Shao,Yunfei Ren,Wenjing Xu,Min Li,Wentao Liu,Xuying Liu,Jianwen Zhao
DOI: https://doi.org/10.1021/acsami.0c13824
2020-11-03
Abstract:Development of large-area, low-cost, low-voltage, low-power consumption, flexible high-performance printed carbon nanotube thin-film transistors (TFTs) is helpful to promote their future applications in sensors and biosensors, wearable electronics, and the Internet of things. In this work, low-voltage, flexible printed carbon nanotube TFTs with a large-area and low-cost fabrication process were successfully constructed using ultrathin (∼3.6 nm) AlO<sub><i>x</i></sub> thin films formed by plasma oxidation of aluminum as dielectrics and screen-printed silver electrodes as contact electrodes. The as-prepared bottom-gate/bottom-contact carbon nanotube TFTs exhibit a low leakage current (∼10<sup>–10</sup> A), a high charge carrier mobility (up to 9.9 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>), high on/off ratios (higher than 10<sup>5</sup>), and small subthreshold swings (80–120 mV/dec) at low operation voltages (from −1.5 to 1 V). At the same time, printed carbon nanotube TFTs showed a high response (Δ<i>R</i>/<i>R</i> = 99.6%) to NO<sub>2</sub> gas even at 16 ppm with a faster response and recovery speed (∼8 s, exposure to 0.5 ppm NO<sub>2</sub>), a lower detection limit (0.069 ppm NO<sub>2</sub>), and a low power consumption (0.86 μW, exposure to 16 ppm NO<sub>2</sub>) at a gate voltage of 0.2 V at room temperature. Moreover, the printed carbon nanotube devices exhibited excellent mechanical flexibility and bias stress stability after 12,000 bending cycles at a radius of 5 mm and a bias stress test for 7200 s at a gate voltage of ±1 V, which originated from the ultrathin and compact AlO<sub><i>x</i></sub> dielectric and the super adhesion force between screen-printed silver electrodes and polyethylene terephthalate substrates.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c13824?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c13824</a>.Characteristics of SWCNT materials used for sensors; absorption spectrum and SEM image of sorted SWCNTs; schematic illustration of the definition of the SWCNT peak ratio [φ<sub>i</sub> = <i>A</i><sub>CNT</sub>/(<i>A</i><sub>CNT</sub> + <i>A</i><sub>B</sub>)]; Raman spectra of sorted SWCNT thin films; leakage currents of printed SWCNT TFTs with different metal electrodes, inkjet-printed silver electrodes, evaporated aluminum electrodes, and screen-printed silver electrodes using five different commercial silver pastes; power consumption of the device when exposed to 0.5–16 ppm NO<sub>2</sub>; transfer curves of four different SWCNT TFT devices before and after exposure to 40 ppm NO<sub>2</sub> for 30 min and after the gas desorption process; transfer curves of a SWCNT TFT device after exposure to 4–16 ppm NO<sub>2</sub>; changes in threshold voltage and off-current after exposure to 4–16 ppm NO<sub>2</sub>; transfer curve of SWCNT TFTs with different dielectric layers and electrode materials before and after exposure to 16 ppm NO<sub>2</sub> gas; alumina as the dielectric layer and palladium as source and drain electrodes; hafnium dioxide as the dielectric layer and gold as the source and drain electrodes; alumina as the dielectric layer and gold as the source and drain electrodes; transfer curves of flexible printed SWCNT TFTs before and after bending for 12,000 times; changes in the transfer curves of four different SWCNT TFTs after 12,000 bending cycles; thickness and profile of the screen-printed silver electrode measured using a step profiler (Veeco, Dektak 150); adhesion test of screen-printed silver electrodes on PET substrates; schematic diagram of NO<sub>2</sub> gas sensing; response characteristics of a transistor-type sensor to 8 ppm NO<sub>2</sub> at different gate voltages, with gate voltages of −0.2, 0.2, 0.4, 0.6, 0.8, 1, 1.5, and 2 V; relationship between the response time and the NO<sub>2</sub> concentrations for two transistor-type and resistance-type sensors; repeatability of the transistor-type sensor; selectivity of the transistor-type sensor; fitted response of the SWCNT-TFT sensor to NO<sub>2</sub>; polynomial fitting plot of resistance versus time before NO<sub>2</sub> exposure; response plots of the device under different NO<sub>2</sub> concentrations; polynomial fitting data; and calculation of root-mean-square (RMS) noise and limit of detection<a class="ref ref57 ref68" href="">(57,68)</a> (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c13824/suppl_file/am0c13824_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology