Abstract:CONSPECTUS: After the discovery of graphene and the development of powerful exfoliation techniques, experimental preparation of two-dimensional (2D) crystals can be expected for any layered material that is known to chemistry. Besides graphene and hexagonal boron nitride (h-BN), transition metal chalcogenides (TMC) are among the most studied ultrathin materials. In particular, single-layer MoS2, a direct band gap semiconductor with ∼1.9 eV energy gap, is popular in physics and nanoelectronics, because it nicely complements semimetallic graphene and insulating h-BN monolayer as a construction component for flexible 2D electronics and because it was already successfully applied in the laboratory as basis material for transistors and other electronic and optoelectronic devices. Two-dimensional crystals are subject to significant quantum confinement: compared with their parent layered 3D material, they show different structural, electronic, and optical properties, such as spontaneous rippling as free-standing monolayer, significant changes of the electronic band structure, giant spin-orbit splitting, and enhanced photoluminescence. Most of those properties are intrinsic for the monolayer and already absent for two-layer stacks of the same 2D crystal. For example, single-layer MoS2 is a direct band gap semiconductor with spin-orbit splitting of 150 meV in the valence band, while the bilayer of the same material is an indirect band gap semiconductor without observable spin-orbit splitting. All these properties have been observed experimentally and are in excellent agreement with calculations based on density-functional theory. This Account reports theoretical studies of a subgroup of transition metal dichalcogenides with the composition MX2, with M = Mo, or W and X = Se or S, also referred to as "MoWSeS materials". Results on the electronic structure, quantum confinement, spin-orbit coupling, spontaneous monolayer rippling, and change of electronic properties in the presence of an external electric field are reported. While all materials of the MoWSeS family share the same qualitative properties, their individual values can differ strongly, for example, the spin-orbit splitting in WSe2 reaches the value of 428 meV, nearly three times that of MoS2. Further, we discuss the effect of strain on the electronic properties (straintronics). While MoWSeS single layers are very robust against external electric fields, bilayers show a linear reduction of the band gap, even reaching a semiconductor-metal phase transition, and an increase of the spin-orbit splitting from zero to the monolayer value at rather small fields. Strain is yet another possibility to control the band gap in a linear way, and MoWSeS monolayers become metallic at strain values of ∼10%. The density-functional based tight-binding model is a useful tool to investigate the electronic and structural properties, including electron conductance, of large MoS2 structures, which show spontaneous rippling in finite-temperature molecular dynamics simulations. Structural defects in MoS2 result in anisotropy of the electric conductivity. Finally, DFT predictions on the properties of noble metal dichalcogenides are presented. Most strikingly, 1T PdS2 is an indirect band gap semiconductor in its monolayer form but becomes metallic as a bilayer.

Modulating the optical and electrical properties of MoSe2 (Molybdenum diselenide) and WS2 (Tungsten disulfide) monolayer by the adsorption of halogen (F, Cl, Br, I and At) atoms

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

Impact of Morphology and Dielectric Property on the Microwave Absorbing Performance of MoS 2 -Based Materials

Graphene-like 2H/1T-MoSe<sub>2</sub> with superior full spectrum absorption: Morphology and phase engineering

Temperature-dependent optical constants of monolayer $${\text {MoS}}_2$$, $${\text {MoSe}}_2$$, $${\text {WS}}_2$$, and $${\text {WSe}}_2$$: spectroscopic ellipsometry and first-principles calculations

Halogens and Alkali Metals Adsorbed Uni-axially Strained ZnS Sphalerite Monolayer for Application in Optoelectronics

Transition Metal Chalcogenides: Ultrathin Inorganic Materials with Tunable Electronic Properties

Impact of in-plane electric field on the optical properties of CO2 adsorbed 2D MoSe2 monolayer: application as a photodetector

Adsorption of Zn atoms by monolayer WS2 doped with different atoms X (X = O, Se, N, P, F, Cl): first principles study

Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors

Composition-dependent absorption of radiation in semiconducting MSi2Z4 Monolayers

Torsional deformation modulation of the electronic structure and optical properties of molybdenum ditelluride systems doped with halogen atoms X (X = F, Cl, Br, I): a first-principles study

Electronic and Optical Properties of Fully Fluorinated Janus MoSSe Monolayer

Electronic Properties of Halogen-Adsorbed Graphene

First-principles study of the magnetic and optical properties of PtSe 2 doped with halogen elements F, Cl, and Br

Control of Charge Carriers and Band Structure in 2D Monolayer Molybdenum Disulfide via Covalent Functionalization.

Ligand induced structure and property changes of 1T-MoS 2 .

Electronic and Optical Properties of Defective MoSe2 Repaired by Halogen Atoms from First-Principles Study

Insulating 6,6‐Phenyl‐C61‐butyric Acid Methyl Ester on Transition‐Metal Dichalcogenides: Impact of the Hybrid Materials on the Optical and Electrical Properties

Resonant perfect absorption of molybdenum disulfide beyond the bandgap