Abstract:Full-color matrix devices based on perovskite light-emitting diodes (PeLEDs) formed via inkjet printing are increasingly attractive due to their tunable emission, high color purity, and low cost. A key challenge for realizing PeLED matrix devices is achieving high-quality perovskite films with a favorable emission structure via inkjet printing techniques. In this work, a narrow phase distribution, high-quality quasi-two-dimensional (quasi-2D) perovskite film without a "coffee ring" was obtained via the introduction of a phenylbutylammonium cation into the perovskite and the use of a vacuum-assisted quick-drying process. Relatively efficient emissions of red, green, and blue (RGB) uniform quasi-2D perovskite films with high photoluminescence quantum yields were cast by the inkjet printing technique. The RGB monochrome perovskite matrix devices with 120 pixel-per-inch resolution exhibited electroluminescence, with maximum external quantum efficiencies of 3.5, 3.4, and 1.0% (for red, green, and blue light emissions, respectively). Furthermore, a full-color perovskite matrix device with a color gamut of 102% (NTSC 1931) was realized. To the best of our knowledge, this is the first report of a full-color perovskite matrix device formed by inkjet printing.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c07526.120 PPI resolution, characteristics of dots printed onto a substrate with drying in air, viscosity of perovskite ink at different temperatures, perovskite crystal structure and PEABr, PPABr, and PBABr molecular structures, PL spectra of perovskite films with different PEABr, PPABr, and PBABr contents, transmission electron microscopy (TEM) image of the perovskite film with 100% PBABr, XRD spectra of perovskite films with different PEABr, PPABr, and PBABr contents, PLQY of perovskite films with different PEABr, PPABr, and PBABr contents, trap density (Nt) of perovskite films with different annealing temperatures, PL excitation intensity dependence for nanoplates with different n-values of 100% PEABr, atomic force microscopy (AFM) images of perovskite films with 100% PEABr, 100% PPABr, and 100% PBABr, SEM images of perovskite films with 100% PEABr and 100% PPABr, the XPS spectra of different etching times, PL spectra from the back side and front side of the quasi-2D perovskite film, GIWAXS image of the quartz substrate and quasi-2D perovskite film with 100% PBABr, interaction structure and energy between PEABr, PPABr, and PBABr, respectively, energy level diagram of the device, lifetime of blue PeLEDs, PL images and spectra of red perovskite, PL images and spectra of green perovskite, stability of perovskite inks, and histogram of RGB device performance (PDF)This article has not yet been cited by other publications.

21.1: Invited Paper: Inkjet Printing Perovskite Quantum Dot Light‐emitting Devices

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