Abstract:The monoclinic gadolinium sesquioxide (denoted as m-Gd2O3) with its lower crystal symmetry exhibits larger dielectric permittivity (κ) than the cubic Gd2O3 (denoted as c-Gd2O3). Recently, a few nanometers thick m-Gd2O3 thin film has been successfully epitaxially grown on a GaN substrate as a promising candidate gate oxide in metal-oxide-semiconductor field-effect transistors (MOSFETs). Thus, it is important to understand the electronic excitations in m-Gd2O3 and investigate them by electron energy loss spectroscopy (EELS) performed with aloof electron beams and electron diffraction to gain the spatial and momentum resolutions. In this study, using scanning transmission electron microscopy combined with EELS (STEM-EELS) in the aloof electron beam setup, we observed low-loss spectral features at 13 eV and 14.5 eV at the specimen edge in a grazing incidence and the material interior, which can be interpreted as a surface plasmon (SP) and a volume plasmon (VP), respectively. Surface exciton polaritons (SEPs), which represents surface resonances associated with excitonic onsets above the bandgap, were also observed at about 7, 10.2, and 36 eV energy loss. Their surface excitation character was confirmed by energy-filtered transmission electron microscopy spectrum imaging (EFTEM-SI) and using relativistic energy versus-momentum (E-k) map calculations. The momentum (q)-dependent EELS indicates that the SEP features near the bandgap represented a function of q and revealed a nondispersive behavior for VP and SEP at 36 eV. The oscillator strengths for VP and SEP at 36 eV dropped at different q values along with different q directions, revealing the anisotropic electronic structures of m-Gd2O3.

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