Pressure-induced coupled structural–electronic transition in SnS 2 under different hydrostatic environments up to 39.7 GPa

Xinyu Zhang,Lidong Dai,Haiying Hu,Meiling Hong,Chuang Li
DOI: https://doi.org/10.1039/d1ra08632d
IF: 4.036
2022-01-01
RSC Advances
Abstract:A pressure-induced coupled structural–electronic transition of SnS 2 was disclosed by high-pressure Raman scattering and electrical conductivity measurement at ∼30.0 GPa under different hydrostatic environments.
chemistry, multidisciplinary
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