Abstract:A precursor originally synthesized for the chemical vapor deposition of metallic nickel, Ni(dmamp)2 (dmamp=1-dimethylamino-2-methyl-2-propanolate, -OCMe2CH2NMe2), has been adopted as a nickel source for the atomic layer deposition of nickel oxide (NiO) using water (H2O) as the oxygen source. The precursor is a solid at room temperature, but readily sublimes at 90 °C. The self-limiting atomic layer deposition (ALD) process by alternate surface reactions of Ni(dmamp)2 and H2O was confirmed from thickness measurements of the NiO films grown with varying Ni(dmamp)2 supply times and numbers of the Ni(dmamp)2-H2O ALD cycles. The ALD temperature window for this precursor was found to be between 90 and 150 °C. Under optimal reaction conditions, the growth rate of the NiO films was ∼0.8Å∕cycle. The NiO films deposited on Si(001) at 120 °C were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy. The x-ray diffraction patterns showed no distinct peaks for NiO, indicating that the films deposited at this temperature were amorphous. X-ray photoelectron spectroscopy analysis showed the films to be stoichiometric with no detectable amount of carbon impurities. For a film with the thickness of 810 Å (with 1000 ALD cycles) the root-mean-square surface roughness was only ∼4Å as measured by atomic force microscopy. To elucidate the ALD mechanism of the Ni precursor with water, a quadrupole mass analyzer was employed with D2O as the oxygen source in lieu of H2O. Interestingly, unlike the usual ALD fashion, the Ni(dmamp)2 precursor does not seem to decompose but only coordinatively bond to the OH-terminated surface when it was introduced. Next, the Ni(dmamp)2-surface species decompose to produce a hydroxylated nickel oxide surface and the alcohol dmampH when water was supplied.

Reactive sputter deposition of β-Ni(OH)2 thin films in Ar + H2O mixed gas atmosphere at a substrate temperature of −80 °C

Transformation nanostructured nickel hydroxide to nickel oxide film by aqueous chemical growth

Thermal, structural and optical properties of NiOx thin films deposited by reactive dc-magnetron sputtering

Tunable Electrical Properties of NiO Thin Films and P-Type Thin-Film Transistors

Nickel Oxide/nickel Nanohybrids for Oxygen and Hydrogen Evolution in Alkaline Media

XPS study of NiO thin films obtained by chemical vapor deposition

Effect of Oxygen-Evaporation-Preventative Post-Annealing Gas Conditions on NiO Thin Films

Reactive Sputtered NiO-YSZ Anode Functional Layer for Thin Film Low-Temperature Solid Oxide Fuel Cell

Properties of the Highly Textured (200) NiO Thin Film Deposited by RF Magnetron Sputtering

Preparation and Electrochemical Behavior of Nano Β-Ni(oh)2

Research on the Preparation and Electrochemical Properties of NiO Anode Films

Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)

Room-temerature oxidation of Ni(110) at low and atmospheric oxygen pressures

Atomic layer deposition of nickel oxide films using Ni(dmamp)2 and water

Deposition and Microstructural Characterization of NiO Thin Films by a Spray Pyrolysis Method

Effects of atomic oxygen on the growth of NiO films by reactive magnetron sputtering deposition

Structural and chemical properties of NiOx thin films: the role of oxygen vacancies in NiOOH formation in a H2O atmosphere

Growth, Physical and Electrical Characterization of Nickel Oxide Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition Using Nickelocene and Oxygen Precursors

Characterization and preparation of NiO-V2O5 composite film cathodes

Study of Reactively Sputtered Nickel Nitride Thin Films

Electrochemical Characteristics of Nickel Hydroxide Fabricated from a Spent Electroless Plating Bath