Abstract:This study mainly investigates the influence of hierarchical engineering based on built‐in electric field (BIEF) on the electromagnetic response of absorbers. In brief, the "double" BIEF effect and hollow engineering can facilitate the charge transport and distribution, and ameliorate the impedance matching characteristic, which endows the hybrids with superior electromagnetic wave absorption performances. Construction of built‐in electric field (BIEF) in nanohybrids has been demonstrated as an efficacious strategy to boost the dielectric loss by facilitating oriented transfer and transition of charges, thus optimizing the electromagnetic wave absorption property. However, the specific influence of BIEF on interface polarization needs to explore thoroughly and the BIEF strength should be further augmented. Herein, several dielectric systems incorporated Mott–Schottky heterojunctions and hollow structures are designed and constructed, where bimetallic zeolitic imidazolate framework are employed to derive Cu‐ZnO Mott–Schottky heterojunctions, and hierarchical structures and BIEF are further enriched by introducing hollow structure and reduced graphene oxide. The well‐established "double" BIEF verified by theoretical calculation and hollow engineering can regulate the conductivity, and enhance the polarization relaxation effectively. Especially, there always coexisted both enhanced charge separation and reversed charge distribution in this "double" BIEF, boosting the interface polarization. Attributing to the synergy of well‐matched impedance and amplified dielectric loss, the obtained hybrids exhibited superior absorption (reflection loss of −46.29 dB and an ultra‐wide effective absorption bandwidth of 7.6 GHz at only 1.6 mm). This work proves an innovative model for dissecting dielectric loss mechanisms and pioneers a novel strategy to explore advanced absorbers through enhancing BIEF.

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