Abstract:Silicon plays an important role in the mordern photovoltaic and semiconductive industry. In addition, it also arouses great interest in the scientific research due to its structural variety. In experiment, more than thirteen silicon allotropes have been prepared through high pressure or chemical method. Meanwhile, various new silicon structures have been proposed theoretically. The structural variety leads to various electronic properties, including semiconductivity with different band gaps, metallicity, and superconductivity. These electronic properties have a close relationship with the silicon atomic coordination. For example, silicon allotropes with merely four coordinated atoms usually exhibit semiconductive property, while silicon structures with higher coordination number would show metallicity or superconductivity. Thus far, all the synthesized metastable silicon allotropes are composed of four coordinated atoms. Silicon allotropes with higher coordination numbers are mainly high pressure phases which could not be quenched to the ambient condition. One might wonder whether there would be possibility for the preparation of metastable metallic silicon structures. In this paper, a new metallic metastable silicon allotrope has been proposed theoretically using the particle swarm optimization method. This structure was also found when removing the La atoms in α-LaSi5. Its stability was verified by calculating its elastic constants and phonon spectrum. It might be achieved by removing the La atoms from the α-LaSi5 precursor, which is analogous with the recent preparation of Si24. The tunnel-like voids in this structure lead to its lower density than that of the Si-I phase. There are 40% five coordinated silicon atoms, wheras the others are four coordinated. Since silicon has four valence electrons, sp3 hybridized four connected silicon just satisfy the octet rule and would show semiconductivity. The change of coordination number results in a charge transfer between different atoms as indicated by the atomic population. Five connected silicon atoms need more electrons to bonding with other atoms. Electronic band structure calculation indicated that this structure possess metallic property. The metallicity might be due to the delocalization of valence electrons which is induced by the existence of five coordinated atoms. The chemical bonding in this structure includes covalency, metallicity, and ionicity.

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Dumbbell Silicene: A Strain-Induced Room Temperature Quantum Spin Hall Insulator

A New Metastable Metallic Silicon Allotrope

On the Nature of the Bonding in Metal-Silane sigma-Complexes

Electronic structure and bonding in epitaxially stabilized cubic iron silicides

Topological Analysis and Structural Role of Silicon Motifs in Metal Silicides

Structural and Electronic Properties of Metal-Encapsulated Silicon Clusters in A Large Size Range

First-Principles Calculations Of Metal Stabilized Si-20 Cages

Electronic Structure Of The Si-Containing Topological Dirac Semimetal Caal2si2

Cohesive, structural, and electronic properties of Fe-Si compounds

Bonding properties of amorphous silicon and quantum confinement in the mixed phases of silicon nano slabs

A Stable Silicon(0) Compound with a Si=Si Double Bond

Superconductivity in Ca-intercalated bilayer silicene

Electronic structure of the Si-containing topological Dirac semimetal CaA l 2 S i 2

Phase boundary between Na-Si clathrates of structures I and II at high pressures and high temperatures

Crystal Chemistry at Interfaces Between Liquid Al and Polar SiC{0001} Substrates

Real Structure, Magnetism and Chemical Bonding of SmSi3‐x

Geometric And Electronic Properties Of Endohedral Si@C-74

Deciphering the Atomic Size Factor in Quasi-ternary Zintl phases RAg0.5Al0.5Ge (R = Ca, Eu) with the TiNiSi type Structure

Structural properties of amorphous metal carbides; theory and experiment

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