Abstract:The existence of surface plasmon polaritons in doped silicon micro-scale structures has opened up new and innovative possibilities for applications, such as sensing, imaging, and photonics. A CMOS-compatible doped Si plasmonic sensor is proposed and investigated. The plasmon resonance can be tuned by controlling the carrier density and dopant concentration. In this paper, we demonstrate that using silicon doped with phosphorus at a concentration of 5 × 1020 cm-3 can induce surface plasmon resonance in the mid-infrared region. Two ring resonators of two different radii based on metal-insulator-metal waveguide structures are studied individually. Then, the two ring resonators are integrated in the same device. When the two ring resonators are coupled and resonate at the same frequency; two distinct resonance spectral lines are generated with striking features that improve its potential use for sensing and modulation applications. The propagating plasmonic mode is studied, including its mode profile and bend loss. We evaluate the effectiveness of a microstructure gas sensor with dimensions of 15 μm × 15 μm by measuring its sensitivity and selectivity towards methane and ethane gases. Small alterations in the surrounding refractive index led to noticeable shifts in the resonance peak. The sensor achieved a sensitivity of 7539.9 nm/RIU at the mid-infrared spectral range around the 7.7 μm wavelength. Furthermore, by combining the resonators, we can achieve a smaller full width at half maximum (FWHM), which will ultimately result in greater sensitivity than using a single-ring resonator or other plasmonic resonator configurations. Once the sensitivity and selectivity of the sensor are measured, the FOM can be calculated by dividing the sensitivity by the selectivity of the sensor, resulting in an FOM of 6732.

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