An Improved Z-Shaped Dual-Material-Gate DM-SDZ-TFET Biosensor for Label-Free Detection

Jayalakshmi Bitra,Gurumurthy Komanapalli
DOI: https://doi.org/10.1007/s11664-023-10887-9
IF: 2.1
2024-01-08
Journal of Electronic Materials
Abstract:In this paper, the sensitivity of a dielectric-modulated split-drain Z-shaped gate tunnel field-effect transistor (DM-SDZ-TFET) is investigated for label-free detection of biomolecules using the drain engineering approach. The threshold voltage ( V th ), on-current ( I on ), switching current ratio ( I on / I off ), and subthreshold swing (SS) characteristics are used in the in-depth investigation of the sensitivity of the device. The drain engineering strategy is very effective in reducing the ambipolar current as well as the leakage current of the device, and it increases the I on / I off current ratio. The sensitivity of this biosensor was explored comprehensively with extensive simulation by addressing concerns with both drain doping variations and the practical binding difficulties of the biomolecules in the cavity area. The influence of biomolecule position and occupancy rate on device sensitivity was analyzed in detail using three distinct scenarios. The device also demonstrated a high I on of 10 −4 A/μm for the dielectric constant of biomolecules K = 12 (gelatin). This biosensor shows high switching current ratio sensitivity ( S Ion/Ioff ) of 1.5 × 10 4 and threshold sensitivity of 0.245 for the K = 12 target biomolecule. A comparative study reveals that the proposed biosensor provides better sensitivity performance with respect to all possible sensitivity parameters and superior biomolecule detection when compared with the ZHP-DM-TFET biosensor. The simulations of the device are performed using the Silvaco TCAD tool.
engineering, electrical & electronic,materials science, multidisciplinary,physics, applied
What problem does this paper attempt to address?