Abstract:An infrared electrochromic device is constructed based on a hydrogen‐induced metal–insulator phase transition from metallic Mg2Ni to dielectric Mg2NiH4. Reversible emissivity changes are achieved by alternately applying ±2.6 V. The high‐emissivity state is maintained for 3 h, with subsequent device failure caused by stress accumulation and oxidation. The device can be modified to also induce visible color changes. Tunable emissivity technology is promising for the dynamic regulation of infrared radiation. Herein, infrared electrochromic devices based on thin metal films that operate via a novel hydrogen‐induced metal–insulator transition are demonstrated. The use of thin magnesium–nickel (MgxNi) alloy films as both a variable emissivity material and top conductive electrode simplifies the device structure and ensures that large changes in emissivity can be achieved. The constructed sandwich‐structured electrochromic devices also have polyethyleneimine (PEI) as a middle proton‐conducting electrolyte layer and hydrogen tungsten bronze (HxWO3)/indium tin oxide (ITO) as a bottom ion‐storage layer. Upon application of a voltage of ±2.6 V, the emissivity of the MgxNi/Pd/PEI/HxWO3/ITO device can be reversibly regulated, with emissivity changes of 0.48 and 0.43 in the 3–5 and 7.5–14 μm atmospheric windows, respectively. Under open‐circuit conditions, the high‐emissivity state of the device can be stably maintained for 3 h. The emissivity change is affected by the composition and thickness of the MgxNi film and the device failure mechanism involves the breakage and oxidation of this film after cycling. Corresponding flexible devices that exhibit electrochromism in the visible region have great potential for adaptive thermal camouflage, smart thermal management, and dynamic information displays.

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