Abstract:Organic field‐effect transistors (OFETs) based on two‐dimensional (2D) monolayer organic semiconductors (OSC) have demonstrated promising potentials for various applications, such as light emitting diode (LED) display drivers, logic circuits, and wearable electrocardiography (ECG) sensors. To date, the fabrications of this class of highly crystallized 2D organic semiconductors (OSC) are dominated by solution shearing. As these organic active layers are only a few molecular layers thick, their compatibilities with conventional thermal evaporated top electrodes or sophisticated photolithography patterning are very limited, which also restricts their device density. Here, we develop an electrode transfer stamp and a semiconductor patterning stamp to fabricate OFETs with channel lengths down to 3 μm over a large area without using any chemicals or causing any damage to the active layer. Two‐dimensional (2D) 2,9‐didecyldinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene (C10‐DNTT) monolayer OFETs developed by this new approach shows decent performance properties with a low threshold voltage (VTH) less than 0.5 V, intrinsic mobility higher than 10 cm2 V−1 s−1 and a subthreshold swing (SS) less than 100 mV dec−1. The proposed patterning approach is completely comparable with ultra‐flexible parylene substrate less than 2 μm thick. By further reducing the channel length down to 2 μm and using the monolayer OFET in an AC/DC rectifying circuit, the measured cutoff frequency is up to 17.3 MHz with an input voltage of 4 V. The newly proposed electrode transfer and patterning stamps have addressed the long‐lasting compatibility problem of depositing electrodes onto 2D organic monolayer and the semiconductor patterning. It opens a new path to reduce the fabrication cost and simplify the manufacturing process of high‐density OFETs for more advanced electronic or biomedical applications. This article is protected by copyright. All rights reserved

Damage-free LED lithography for atomically thin 2D material devices

Ultrafast and Resist-Free Nanopatterning of 2D Materials by Femtosecond Laser Irradiation

Residue-free Wafer-Scale Direct Imprinting of Two-Dimensional Materials

Optothermoplasmonic Nanolithography for On‐Demand Patterning of 2D Materials

Facile damage-free double exposure for high-performance 2D semiconductor based transistors

Manipulating Nanopatterns on Two-Dimensional MoS2 Monolayers Via Atomic Force Microscopy-Based Thermomechanical Nanolithography for Optoelectronic Device Fabrication

Via Method for Lithography Free Contact and Preservation of 2D Materials

Strain lithography for two-dimensional materials by electron irradiation

Self-organized nanoparticle photolithography for two-dimensional patterning of organic light emitting diodes

Optical Lithography Technique for the Fabrication of Devices from Mechanically Exfoliated Two-Dimensional Materials

Scalable and Versatile Transfer of Sensitive Two-dimensional Materials

Scratching Lithography for Wafer-Scale MoS2 Monolayers

High-Resolution Van der Waals Stencil Lithography for 2D Transistors

Nanoscale Bilayer Mechanical Lithography Using Water as Developer

Scratching lithography for wafer-scale MoS 2 monolayers

Electrohydrodynamic Direct-Writing Lithography: an Alternative Maskless Technique for Microstructure Fabrication

Advances in direct optical lithography of nanomaterials

Residue-free Fabrication of High-Performance Graphene Devices by Patterned PMMA Stencil Mask

Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics

Noninvasive Deterministic Nanostructures Lithography on 2D Transition Metal Dichalcogenides

Dry Lithography Patterning of Monolayer Flexible Field Effect Transistors by 2D Mica Stamping