Abstract:Recently, there has been a lot of interest in topological insulators (TIs), being electronic materials, which are insulating in their bulk but with the gapless exotic metallic state on their surface. The surface states observed in such materials behave as a perfect conductor thereby making them more suited for several cutting-edge technological applications such as spintronic devices. Here, we report the synthesis and structural characterization of the Zintl phases AIn2As2 (A = Ca, Sr, Ba), which could become a new class of TIs. Crystal structure elucidation by single-crystal X-ray diffraction reveals that CaIn2As2 and SrIn2As2 are isostructural and crystallize in the EuIn2P2 structure type (space group P63/mmc, no. 194, Z = 2) with unit cell parameters a = 4.1482(6) Å, c = 17.726(4) Å; and a = 4.2222(6) Å, c = 18.110(3) Å, respectively. Their hexagonal structure is made up of alternating [In2As2]2- layers separated by slabs of A2+ cations. BaIn2As2 on the other hand crystallizes in the monoclinic EuGa2P2 structure type (space group P2/m, no. 10, Z = 4) with unit cell parameters a = 10.2746(11) Å, b = 4.3005(5) Å, c = 13.3317(14) Å and β = 95.569(2)°. This structure is also layered, and it is made up of different type of polyanionic [In2As2]2- units and Ba2+ cations. The valence electron count for all three compounds adheres to the Zintl-Klemm formalism, and all elements achieve closed-shell electronic configurations. Bulk electronic structure calculations indicate the opening of a bandgap Eg ∼ 0.03 eV (CaIn2As2 and Sr2In2As2), and Eg ∼0.21 eV (BaIn2As2) in the absence of strain and spin-orbit coupling (SOC). These results argue in favor of the realization of a nontrivial topological insulator state under the influence of tensile strain and SOC. Preliminary transport properties on BaIn2As2 are suggestive of a degenerate p-type semiconductor-a behavior which is sought after in thermoelectric (TE) materials. Since both TIs and excellent TE materials are known to favor the same material properties such as narrow bandgap, heavy elements, and strong SOC, these three Zintl phases are also projected as candidates TE materials.

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Two New Members in the Quaternary Cs-Ag-As-S Family with Different Arrangements of Ag-S and As-S Asymmetric Building Units: Syntheses, Structures, and Theoretical Studies.

Crystal and electronic structure of the ternary Zintl bismuthide BaLiBi

Antimony arsenide: Chemical ordering in the compound SbAs

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BaAs 3 : a narrow gap 2D semiconductor with vacancy-induced semiconductor–metal transition from first principles

Electronic Structure of Ba(Zn$_{0.875}$Mn$_{0.125}$)$_{2}$As$_{2}$ Studied by Angle-Resolved Photoemission Spectroscopy

Contribution Of Disulfide S-2(2-) Anions To The Crystal And Electronic Structures In Ternary Sulfides, Ba12in4s19, Ba4m2s8 (M = Ga, In)

Electronic structure of Ba(Zn0.875Mn0.125)2As2 studied by angle-resolved photoemission spectroscopy

Chemical Bonding and Elastic Properties of Quaternary Arsenide Oxides Yznaso and Laznaso Investigated by First Principles

Structural, Electronic and Elastic Properties of zincblende III-Arsenide Binary Compounds: First-Principles Study

Lattice Distortion and Electronic Structure of BaAg2As2 Across Its Nonmagnetic Phase Transition

Contribution of Disulfide S22– Anions to the Crystal and Electronic Structures in Ternary Sulfides, Ba12In4S19, Ba4M2S8 (M = Ga, In)

The Zintl phases A In2As2 (A = Ca, Sr, Ba): new topological insulators and thermoelectric material candidates

Trends in structural and electronic properties for layered SrRu2As2, BaRu2As2, SrRh2As2 and BaRh2As2 from ab initio calculations

A series of new lanthanoid thioarsenates: insights into the influence of lanthanide contraction on the formation of new lanthanoid thioarsenates.

Structural Variability Versus Structural Flexibility. A Case Study of Eu9Cd4+xSb9 and Ca9Mn4+xSb9 (x ≈ (1)/2).

Syntheses, Structures, Optical Properties, and Theoretical Calculations of Cs2Bi2ZnS5, Cs2Bi2CdS5, and Cs2Bi2MnS5

Synthesis and Characterization of Ternary Clusters Containing the [As 16 ] 10– Anion, [MM′As 16 ] 4– (M = Nb or Ta; M′ = Cu or Ag)

The cubic structure of Li3As stabilized by substitution – Li8TtAs4 (Tt = Si, Ge) and Li14TtAs6 (Tt = Si, Ge, Sn) and their lithium ion conductivity