Abstract:Whereas ferroelectricity may vanish in ultra-thin ferroelectric films, it is expected to emerge in ultra-thin anti-ferroelectric films, sparking people's interest in using antiferroelectric materials as an alternative to ferroelectric ones for high-density data storage applications. Lead Zirconate (PbZrO3) is considered the prototype material for antiferroelectricity, and indeed previous studies indicated that nanoscale PbZrO3 films exhibit ferroelectricity. The understanding of such phenomena from the microstructure aspect is crucial but still lacking. In this study, we fabricated a PbZrO3 film with thicknesses varying from 5 nm to 80 nm. Using Piezoresponse Force Microscopy, we discovered the film displayed a transition from antiferroelectric behaviour in the thicker areas to ferroelectric behaviour in the thinner ones, with a critical thickness between 10 and 15 nm. In this critical thickness range, a 12 nm PZO thin film was chosen for further study using aberration-corrected scanning transmission electron microscopy. The investigation showed that the film comprises both ferroelectric and ferrielectric phases. The ferroelectric phase is characterized by polarisation along the pseudocubic [011] projection direction. The positions of Pb, Zr, and O were determined using the integrated differential phase contrast method. This allowed us to ascertain that the ferroelectric PbZrO3 unit cell is half the size of that in the antiferroelectric phase on the ab plane. The observed unit cell is different from the electric field-induced ferroelectric rhombohedral phases. Additionally, we identified a ferrielectric phase with a unique up-up-zero-zero dipole configuration. The finding is crucial for understanding the performance of ultrathin antiferroelectric thin films and the subsequent design and development of antiferroelectric devices.

Size‐Induced Ferroelectricity in Antiferroelectric Oxide Membranes

Prominent Size Effects Without a Depolarization Field Observed in Ultrathin Ferroelectric Oxide Membranes

Size Effects In Epitaxial Ferroelectric Islands And Thin Films

Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit

Ab Initio Study of Ferroelectric Critical Size of SnTe Low-Dimensional Nanostructures.

Size Effects in Perovskite Ferroelectric Nanostructures: Current Progress and Future Perspectives

Size Effects in Ferroelectric Thin Films: The Role of 180 degree domains

Size-Dependent Polarization Distribution In Ferroelectric Nanostructures: Phase Field Simulations

Emergent ferroelectricity in subnanometer binary oxide films on silicon

Ferroelectricity at the extreme thickness limit in the archetypal antiferroelectric PbZrO$_3$

Multiferroic Phases and Transitions in Ferroelectric Lead Titanate Nanodots

Size Effects in Multiferroicbifeo3nanodots: A First-Principles-based Study

Enhanced ferroelectricity in ultrathin films grown directly on silicon

Ultrahigh electromechanical response from competing ferroic orders

Nanosize effect: Enhanced compensation temperature and existence of magneto-dielectric coupling in SmFeO3

Coexistence of ferroelectric and ferrielectric phases in ultrathin antiferroelectric PbZrO3 thin films

Explicating the Irreversible Electric-Field-Assisted Ferroelectric Phase Transition in the Otherwise Antiferroelectric Sodium Niobate for Energy Storage Systems

Investigating the effects of reduced size on the properties of ferroelectrics.

Ferroelectric Problem beyond the Conventional Scaling Law.

Possible Absence of Critical Thickness and Size Effect in Ultrathin Perovskite Ferroelectric Films

Ferroelectric Size Effects In Multiferroic Bifeo3 Thin Films