Abstract:Semiconductor behavior has emerged as a promising substance for numerous advancements in natural energy production, storage, and conversion, as well as in medical technology due to exceptional properties and capabilities of the perovskites. Additionally, this property also presents a great opportunity for solar cells to serve as a substitute for conventional silicon‐based photovoltaic systems, as they provide greater efficiency and cost‐effective conversion of sunlight to electricity. Here, we are for the first time investigating lead‐free environment‐friendly cubic perovskites ASnX3 (A = Na and Li; X = Cl, Br, and I) under different hydrostatic pressures ranging from 0 to 5 GPa. Utilizing the GGA + PBE functional method with a space group of 221 (Pm3m), ASnX3 compounds (A = Na and Li; X = Cl, Br, and I) demonstrate direct bandgaps at 0 GPa, ranging from 0.790 to 0.282 eV for Li‐based halides and 0.760–0.296 eV for Na‐based halides, characterizing their semiconductor nature within the perovskite crystal lattice. Furthermore, our analysis revealed that the conduction band and the valence band intersect at a point above the Fermi level which influences the transition of semiconductor to metal or the creation of a half‐metallic state. The optical and structural properties of the compound were also examined, and as the pressure rose from 0 to 5 GPa, the absorption redshift occurred. The analysis of magnetic properties revealed that ASnX3 (A = Na and Li; X = Cl, Br, and I) compounds have diamagnetic behavior in both normal and under pressure conditions. Meanwhile, compounds that satisfy mechanical stability requirements up to certain pressures demonstrate alternations in bulk modulus, shear modulus, and Young's modulus. The compounds show ductile behavior as their Poisson's ratio values range between 0.28 and 0.44 for every compound. Increasing pressure increases the values of the compounds, but the compounds remain in the same range of ductile material and show better ductility. Finally, increasing pressure influences the characteristics of the compounds as I‐based compounds change phase transitions from semiconductor behavior to metallic behavior. On the other hand, Cl‐based and Br‐based compounds show semimetallic behavior for increased pressure.

First principles computation of insulator–semiconductor–metal transition and its impact on structural, elastic, mechanical, anisotropic and optical properties of CsSrF3 under systematic static isotropic pressure

Transition Phase and Elastic Properties of SrS Via First-Principles Calculations

New Metallic Ordered Phase of Perovskite CsPbI3 under Pressure

First-principles study on structural, electronic, and elastic properties of SrFCl

First-Principles Study Of Structural Stabilities, And Electronic And Optical Properties Of Caf2 Under High Pressure

Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl3 perovskite under pressure

Ab-initio investigation of the structural, electronic and optical properties of CsPbBr 3 perovskite under pressure using the DFT-1/2 method

Structural, elastic, optic, and electronic properties of strontium oxide under pressure studied by first-principles calculations

Pressure-induced modulation of structural, electronic, and optical properties of LiCaF 3 fluoro perovskite for optoelectronic applications

Pressure-dependent band gap engineering with structural, electronic, mechanical, optical, and thermal properties of CsPbBr3: first-principles calculations

Investigating the effects of hydrostatic pressure on the physical properties of cubic Sr3BCl3 (B = As, Sb) for improved optoelectronic applications: A DFT study

Exploring the influence of pressure-induced semiconductor-to-metal transition on the physical properties of cubic perovskites FrXCl3 (X = Ge and Sn)

Semiconductor-metal transition in TlPbF 3 under isotropic pressure and its impact on optical, elastic and mechanical properties: A DFT computation with HSE06

Pressure Induced Structural, Electronic and Optical Properties of CsPbI3 Perovskite

Investigation of high-pressure effect on the physical properties of FrNBr3 (N Ca, Sr) non-toxic halide perovskites

Tuning of band gap and enhancing electronic properties of CsSnBr3 under high pressure for optoelectronic applications

DFT calculations of pressure effects on structural stability, optoelectronic and thermoelectric properties of SrZrO3

Comprehensive Analysis of the Structural, Electronic, Elastic, and Optical Properties of SrS Compound Under Pressure: First-Principles Calculations

Impact of Applied Pressure on Tin‐Based Cubic Halide Perovskite ASnX3 (A = Li, Na and X = Cl, Br, and I) in Reference to Their Optoelectronic Applications

Tailoring structural, electronic, elastic and optical properties of Strontium-based XSrO 3 (X= Rb, Cs) oxide perovskites employing density functional theory

Effects of pressure on the structural, electronic, and elastic properties of superconductor material with perovskite structure YBa2Cu3O7: insights from ab initio calculation