Abstract:Magnetoresistance (MR) sensors provide cost‐effective solutions for diverse industrial and consumer applications, including emerging fields such as internet‐of‐things (IoT), artificial intelligence, and smart living. Commercially available MR sensors such as anisotropic magnetoresistance (AMR) sensors, giant magnetoresistance (GMR) sensors, and tunnel magnetoresistance (TMR) sensors typically require an appropriate magnetic bias for both output linearization and noise suppression, resulting in increased structural complexity and manufacturing cost. Here, an all‐in‐one spin Hall magnetoresistance (SMR) sensor with built‐in AC excitation and rectification detection is demonstrated, which effectively eliminates the requirements of any linearization and domain stabilization mechanisms separated from the active sensing layer. This is made possible by the coexistence of SMR and spin–orbit torque (SOT) in ultrathin NiFe/Pt bilayers. Despite the simplest possible structure, the fabricated Wheatstone bridge sensor exhibits essentially zero DC offset, negligible hysteresis, and a detectivity of around 1 nT Hz−1/2 at 1 Hz. In addition, it also shows an angle dependence to external field similar to those of GMR and TMR, though it does not have any reference layer (unlike GMR and TMR). The superior performances of SMR sensors are evidently demonstrated in the proof‐of‐concept experiments on rotation angle measurement, and vibration and finger motion detection. An all‐in‐one spin Hall magnetic sensor that features simplest structure, nearly zero DC offset, negligible hysteresis, and low noise based on AC excitation is demonstrated. A few proof‐of‐concept potential applications including angle, vibration, and finger movement detection are demonstrated. The work opens new possibilities for further exploitation of spin–orbit torque technology in a wide range of applications.

A flexible anisotropic magnetoresistance sensor for magnetic field detection

Highly flexible anisotropic magnetoresistance sensor for wearable electronics

Highly Sensitive Flexible Magnetic Sensor Based on Anisotropic Magnetoresistance Effect

Giant Magnetoimpedance Effect in a Co-Based Microwire for Quick-Response Magnetic Sensor Applications

A Flexible Magnetic Field Sensor Based on PZT/CFO Bilayer via van der Waals Oxide Heteroepitaxy

Ultrasensitive flexible magnetoelectric sensor

Printable anisotropic magnetoresistance sensors for highly compliant electronics

Flexible magnetic sensor based on FBAR

A high-sensitive anisotropic magnetoresistive sensor based on hybrid Ta/NiFe/Ta/Al multilayer structure

Flexible Magnetic Sensors

Development of a Compliant Magnetic 3-D Tactile Sensor with AMR Elements.

Flexible, self-powered, magnetism/pressure dual-mode sensor based on magnetorheological plastomer

Ultrathin All-in-One Spin Hall Magnetic Sensor with Built-In AC Excitation Enabled by Spin Current

A shape-deformable liquid-metal-filled magnetorheological plastomer sensor with a magnetic field “on-off” switch

A flexible magnetic field sensor based on paramagnetic C60@Fe3O4 nanocomposites and ordered hexagonally structured substrate

Angular Position Sensor Based on Anisotropic Magnetoresistive and Anomalous Nernst Effect

Design and Fabrication of Full Wheatstone-Bridge-Based Angular GMR Sensors

Non-tensile Piezoresistive Sensor Based on Coaxial Fiber with Magnetoactive Shell and Conductive Flax Core

Pressure-insensitive magnetic shear force sensor with pillar structure for versatile application

Magnetic and Magnetotransport Properties of Memory Sensors Based on Anisotropic Magnetoresistance