Sensitized Near-Infrared Lanthanide Emission in Chalcogenide Perovskites.

Jinan Hussein Al shuhaib,Isabel J. Ferrer,Jose Ramon Ares,Salvatore Cianci,Federico Tuzi,Elena Blundo,Antonio Polimeni,Antonio Benayas,Riccardo Marin,Fabrice Leardini

DOI: https://doi.org/10.1039/d4tc04446k

IF: 6.4

2024-11-29

Journal of Materials Chemistry C

Abstract:Semiconductor materials capable of hosting luminescent lanthanide ions (Ln 3+ ) and sensitize their emission are scarce. Halide perovskites are prime systems for this purpose, yet they often feature toxic elements (e.g., lead) in their composition and have reduced stability. The discovery of alternative semiconductors that feature host-to-Ln 3+ energy transfer mechanisms – while being more stable and environmentally benign – would thus broaden the applicability of this class of luminescent materials. Herein, we report near-infrared (NIR) emitting phosphors made of BaZrS 3+ chalcogenide perovskite doped with Ln 3+ ions (Ln = Yb, Er, Nd). We chose BaZrS 3+ because it features i) crystallographic sites that can accommodate Ln 3+ ions, ii) high light absorption coefficient in the visible, and iii) stability. The phosphors were prepared via sulfurization of Ln 3+ -doped BaZrO 3+ microparticles obtained by a microwave-assisted procedure. The so-obtained Ln 3+ -doped BaZrS 3+ display low-temperature NIR emission characteristic of each Ln 3+ ion when exciting the matrix. Following photoluminescence studies on doped and undoped BaZrS 3+ as a function of temperature, we propose an energy level scheme that explains the rich NIR photoluminescence displayed by these phosphors. The obtained results pave the way for the optimization of Ln 3+ -doped BaZrS 3+ for optical applications and are expected to spur the study of other ternary chalcogenides sensitization of Ln 3+ luminescence.

materials science, multidisciplinary,physics, applied