Abstract:CMOS detectors offer many advantages over CCDs for optical and UV astronomical applications, especially in space where high radiation tolerance is required. However, astronomical instruments are most often designed for low light-level observations demanding low dark current and read noise, good linearity and high dynamic range, characteristics that have not been widely demonstrated for CMOS imagers. We report the performance, over temperatures from 140 - 240 K, of a radiation hardened SRI 4Kx2K back-side illuminated CMOS image sensor with surface treatments that make it highly sensitive in blue and UV bands. After suppressing emission from glow sites resulting from defects in the engineering grade device examined in this work, a 0.077 me-/s dark current floor is reached at 160 K, rising to 1 me$^-$/s at 184 K, rivaling that of the best CCDs. We examine the trade-off between readout speed and read noise, finding that 1.43 e$^-$ median read noise is achieved using line-wise digital correlated double sampling at 700 kpix/s/ch corresponding to a 1.5 s readout time. The 15 ke$^-$ well capacity in high gain mode extends to 120 ke$^-$ in dual gain mode. Continued collection of photo-generated charge during readout enables a further dynamic range extension beyond $10^6$ e$^-$ effective well capacity with only 1% loss of exposure efficiency by combining short and long exposures. A quadratic fit to correct for non-linearity reduces gain correction residuals from 1.5% to 0.2% in low gain mode and to 0.4% in high gain mode. Cross-talk to adjacent pixels is only 0.4% vertically, 0.6% horizontally and 0.1% diagonally. These characteristics plus the relatively large 10 $\mu$m pixel size, quasi 4-side buttability, electronic shutter and sub-array readout make this sensor an excellent choice for wide field astronomical imaging in space, even at FUV wavelengths where sky background is very low.

Integrated 4H-SiC Photosensors With Active Pixel Sensor-Type Circuits for MGy-Class Radiation Hardened CMOS UV Image Sensor

4H-SiC 64-pixels CMOS image sensors with 3T/4T-APS arrays

A Cmos Image Sensor For Monochromatic Spectrum Imaging

Single-pixel UV image sensor based on 4H-SiC CMOS technology with gamma-ray irradiation resistance

Double Junction Photodiode for X-Ray Cmos Sensor Ic

Design and characterization of ionizing radiation-tolerant CMOS APS image sensors up to 30 Mrd (Si) total dose

A Radiation-Hardened CMOS Image Sensor With Pixels Exhibiting a Negligibly Small Dark-Level Increase During Ionizing Radiation

Multi-MGy Radiation Hard CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests

4H-SiC Ultraviolet Photodetector Array with Vertical MSM Configuration

Progress on the radiation tolerance of CMOS Monolithic Active Pixel Sensors

Characterization of Low Light Performance of a CMOS sensor for Ultraviolet Astronomical Applications

Analyzing the Radiation Degradation of 4-Transistor Deep Submicron Technology CMOS Image Sensors

High-Performance 8 × 8 4H-SiC-Based MISIM Photodetector Arrays for UV Imaging

Highly Sensitive Photoelectric Detection and Imaging Enhanced By Pyro‐phototronic Effect Based On A Photoinduced Dynamic Schottky Effect in 4H‐SiC

The CIGS semiconductor detector for particle physics

High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection

4H-Sic UV Photo Detectors with Large Area and Very High Specific Detectivity

Overview of Ionizing Radiation Effects in Image Sensors Fabricated in a Deep-Submicrometer CMOS Imaging Technology

Characterization of Fully Depleted CMOS Active Pixel Sensors on High Resistivity Substrates for Use in a High Radiation Environment

Predicting the effect of radiation damage on dark current in a space-qualified high performance CMOS image sensor