Abstract:Optical, topographic, and structural characterization of chromium oxide thin film grown with the magnetron RF sputter technique was performed separately as pre-annealing and post-annealing in this study. Likewise, gas sensor measurement was made separately before and after annealing. The crystal structure of the films was analyzed by X-ray diffractometer in the θ-2θ Bragg Brentana configuration (CuK α (λ = 1.5405 Å). The films were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM) in tapping mode, UV–Vis photospectroscopy, and X-ray photoelectron spectroscopy (XPS) with an Al anode used as the X-ray source. As-grown chromium oxide thin films were obtained at 450 °C with the RF magnetron sputter system with 350 nm thickness and 150 W power. The band gap of the annealed sample at 550 °C was 3.02 eV, while the band gap of the unannealed sample was 3.66 eV. An unknown chromium oxide crystal structure was seen in the unannealed sample. A rhombohedral Cr 2 O 3 structure was seen in the annealed sample. Raman spectra of annealed Cr 2 O 3 thin film on glass showed the best peak shape of the Cr 2 O 3 A1g mode at 550 cm −1 . Raman spectra of unannealed (as-grown) CrO thin film on glass showed the best peak shape of the CrO A1g mode at 842 cm −1 . By fitting the XPS data of the chromium oxide structure annealed at 550 °C, peaks were observed at the values of 530.46–531 eV for O1s 1/2 and 574.04–578.45 eV for Cr2p 3/2 . Finally, while the as-grown Cr 2 O 3 structure in gas sensor measurements reacted to hydrogen gas at 200 °C and 300 °C, the chromium oxide structure annealed at 550 °C did not react to the gas at all three temperature values. As-grown Cr 2 O 3 structure is a suitable material for a gas sensor, while the material annealed Cr 2 O 3 structure is more resistant to corrosion.

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