Sm doped BNT–BZT lead-free ceramic for energy storage applications with broad temperature range

Zixuan Pan,Hua Hao,Dongxu Li,Qinghu Guo,Zhonghua Yao,Minghe Cao,Hanxing Liu

DOI: https://doi.org/10.1007/s10854-022-08383-7

2022-05-26

Abstract:Dielectric ceramics with good temperature stability and excellent energy storage performances are in great demand for numerous electrical energy storage applications. In this work, x Sm doped 0.5Bi 0.51 Na 0.47 TiO 3 –0.5BaZr 0.45 Ti 0.55 O 3 (BNT–BZT − x Sm, x = 0–0.04) relaxor ferroelectric lead-free ceramics were synthesized by high temperature solid-state sintering for energy storage applications. The grain sizes of BNT–BZT − x Sm ceramics exhibited gradually decrease with the increase of Sm doping content, and the temperature stability of dielectric properties were improved due to the significantly reduced dielectric constant at depolarization temperature ( T d ). It's worth noting that a good temperature stability with the variation of dielectric constant at − 50–200 °C (Δ ε ) less than 15% was obtained in the BNT–BZT − 0.04Sm ceramic. A high recoverable energy storage density W rec = 1.12 J/cm 3 and high energy storage efficiency η = 89.6%, together with excellent temperature stability from 25 to 200 °C and fast charge–discharge t 0.9 = 0.655 μs were achieved in BNT–BZT − 0.04Sm ceramic, demonstrating its potential application for future pulse electric device candidate.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied