Strain Induces Ferromagnetism in a Janus Transition Metal Dichalcogenides: CrSTe-1H Monolayer

Altaf Ur Rahman
DOI: https://doi.org/10.1007/s11664-022-10075-1
IF: 2.1
2022-12-04
Journal of Electronic Materials
Abstract:A Janus transition metal dichalcogenide's structural, electronic, and magnetic properties in its two possible phases, namely CrSTe-1T and CrSTe-1H monolayer, are investigated using first-principles calculations. It is found that the CrSTe-1T monolayer is more stable than the CrSTe-1H monolayer by an amount of 0.4 eV at the equilibrium lattice constant. Due to the insurmountable energy barrier, diffusing the Te atom into the hexagon center in the CrSTe-1T monolayer is experimentally challenging. So, the CrSTe-1H monolayer is considered for further investigations, which has a hexagonal crystal structure. The calculated formation energy shows structural stability, while phonon dispersion indicates the kinetic stability of a Janus CrSTe-1H monolayer. Furthermore, the spin-polarized calculations show that the Janus CrSTe-1H monolayer is a non-magnetic semiconductor with a finite indirect electronic bandgap of 0.20 eV ( - M). However, applying a small biaxial tensile strain of 1.6%, the transition from non-magnetic to magnetic and semiconducting to half-metallic occurred. Further increasing the biaxial strain, the bandgap for the spin-down channel increases, and, interestingly, the half-metalicity is robust up to +10% biaxial tensile strain. In contrast, the bandgap increases with compressive strain up to and then decreases up to , but no spin-polarization was induced. Furthermore, ferromagnetic (FM) and anti-ferromagnetic (AFM) interactions of a Janus CrSTe-1H monolayer were investigated. The calculated ΔE indicates that the AFM-1 (FM) state is more favorable under 0% (+6%) biaxial strain condition. The estimated exchange coupling parameter as  meV under +6 biaxial strain results in near room-temperature ferromagnetism. Using the 2D Ising model, the Curie temperature ( ) of 274.85 K for a Janus CrSTe-1H monolayer is estimated at biaxial strain. These calculations predict that the 2D Janus CrSTe-1H monolayer is a candidate for electronic, spintronic, and photovoltaic devices. For example, for photovoltaic applications, the optical absorption is calculated. The optical absorption is about 10–20%, indicating larger absorption, so the Janus CrSTe-1H monolayer is a good sunlight harvester for photovoltaic applications.
engineering, electrical & electronic,materials science, multidisciplinary,physics, applied
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