Energetic disorder impacts energy-level alignment of alpha-sexithiophene on hydrogen-terminated silicon and silicon oxide

Botong Chen,Jiaxin Hu,Qi Wang,Steffen Duhm
DOI: https://doi.org/10.1088/2053-1591/ac8644
IF: 2.025
2022-08-04
Materials Research Express
Abstract:The energy-level alignment at hybrid organic-inorganic interfaces is decisive for the performance of (opto-)electronic devices. We use ultraviolet and X-ray photoelectron spectroscopy (UPS and XPS) to measure the energy-level alignment of vacuum-sublimed -sexithiophene (6T) thin films with HF-etched n-type Si(100) and with Si with a native oxide layer (SiOx). The 6T thin films induce a small (<0.1 eV) downwards band bending into both substrates as shown by XPS. The well-ordered growth of 6T on Si leads to a relatively narrow density of states (DOS) distribution of the highest occupied molecular orbital (HOMO) as shown by UPS. Furthermore, the Fermi-level comes to lie at rather mid-gap position and, consequently, no energy-level bending occurs in the 6T layer. Structural disorder in the 6T thin film on SiO x leads to a broad HOMO DOS distribution and to tailing states into the energy gap. Consequently, downwards energy-level bending (by around 0.20 eV) takes place in the 6T layer.
materials science, multidisciplinary
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