Abstract:The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance, such as giant magnetoresistance<a href="/articles/s41567-019-0621-6#ref-CR1">1</a>,<a href="/articles/s41567-019-0621-6#ref-CR2">2</a> and tunnelling magnetoresistance<a href="/articles/s41567-019-0621-6#ref-CR3">3</a>,<a href="/articles/s41567-019-0621-6#ref-CR4">4</a>, in magnetic multilayers. Recently, new types of this effect have been observed in much simpler bilayers consisting of ferromagnetic and non-magnetic thin films<a href="#ref-CR5">5</a>,<a href="#ref-CR6">6</a>,<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="#ref-CR9">9</a>,<a href="/articles/s41567-019-0621-6#ref-CR10">10</a>. However, the magnitude of the change in resistance with magnetic field in these materials is very small, varying between 0.01 and 1%. Here, we demonstrate that non-magnetic–ferromagnetic bilayers consisting of a conducting non-magnetic InAs quantum well and an insulating ferromagnetic (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance of approximately 80% at high magnetic field, and that its magnitude can be controlled by a gate. The mechanism for this large magnetoresistance is a strong magnetic proximity effect. The spin splitting in the InAs quantum well induced by the magnetic proximity effect can be varied between 0.17 meV and 3.8 meV by varying the gate voltage. In principle, this provides a mechanism to locally access Majorana fermions in InAs-based Josephson junctions<a href="#ref-CR11">11</a>,<a href="#ref-CR12">12</a>,<a href="#ref-CR13">13</a>,<a href="/articles/s41567-019-0621-6#ref-CR14">14</a> and introduces a new concept of magnetic-gating spin transistors in which the non-magnetic channel current is modulated by both electrical and magnetic means.

Magnetic Proximity Effect in a van der Waals Moiré Superlattice

Strong magnetic proximity effect in Van der Waals heterostructures driven by direct hybridization

Electrical Control of Magnetic Proximity Effect in a Graphene/multiferroic Heterostructure

Magnetic Proximity Effect in Graphene Coupled to A Bifeo3 Nanoplate

Magnetic Proximity Effect in 2D Ferromagnetic CrBr3/Graphene van der Waals Heterostructures

Proximity effects in Graphene and Ferromagnetic CrBr3 van der Waals Heterostructure

Magnetic proximity effect in superconductor/ferromagnet van der Waals heterostructures: dependence on the number of superconducting monolayers

Layer-resolved magnetic proximity effect in van der Waals heterostructures

Gate-controlled proximity effect in superconductor/ferromagnet van der Waals heterostructures

Spin-polarized transport properties in magnetic moiré superlattices

Magnetic Proximity Effect in Ultrathin Freestanding WS2/LaMnO3 Van Der Waals Heterostructures

Magnetic proximity effect induced spin splitting in two-dimensional antimonene/Fe<sub>3</sub>GeTe<sub>2</sub> van der Waals heterostructures

Gate-Tunable Proximity Effects in Graphene on Layered Magnetic Insulators

The magnetic proximity effect at the MoS2/CrI3 interface

The Magnetic Proximity Effect and Electrical Field Tunable Valley Degeneracy in Mos2/Eus Van Der Waals Heterojunctions

Proximity-Induced Tunable Magnetic Order at the Interface of All-van der Waals-Layered Heterostructures

Van der Waals Heterostructures: Controllable Magnetic Proximity Effect and Charge Transfer in 2D Semiconductor and Double‐Layered Perovskite Manganese Oxide van der Waals Heterostructure (Adv. Mater. 50/2020)

Ferroelectric Semimetals with van der Waals Heterostructures and Their Topological Currents

Interplay between spin proximity effect and charge-dependent exciton dynamics in MoSe2/CrBr3 van der Waals heterostructures

Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic–non-magnetic bilayers