Abstract:Nanodiamonds containing negatively charged nitrogen-vacancy (NV$^-$) centers are versatile room-temperature quantum sensors in a growing field of research. Yet, knowledge regarding the NV-formation mechanism in very small particles is still limited. This study focuses on the formation of the smallest NV$^-$-containing diamonds, 5 nm detonation nanodiamonds (DNDs). As a reliable method to quantify NV$^-$ centers in nanodiamonds, half-field signals in electron paramagnetic resonance (EPR) spectroscopy are recorded. By comparing the NV$^-$ concentration with a series of nanodiamonds from high-pressure high-temperature (HPHT) synthesis (10 - 100 nm), it is shown that the formation process in 5 nm DNDs is unique in several aspects. NV$^-$ centers in DNDs are already formed at the stage of electron irradiation, without the need for high-temperature annealing. The effect is explained in terms of "self-annealing", where size and type dependent effects enable vacancy migration close to room temperature. Although our experiments show that NV$^-$ concentration generally increases with particle size, remarkably, the NV$^-$ concentration in 5 nm DNDs surpasses that of 20 nm-sized nanodiamonds. Using Monte Carlo simulations, we show that the ten times higher substitutional nitrogen concentration in DNDs compensates the vacancy loss induced by the large relative particle surface. Upon electron irradiation at a fluence of $1.5 \times 10 ^{19}$ e$^-$/cm$^2$, DNDs show a 12.5-fold increment in the NV$^-$ concentration with no sign of saturation. These findings can be of interest for the creation of defects in other very small semiconductor nanoparticles beyond NV-nanodiamonds as quantum sensors.

Direct synthesis of group IV-vacancy center-containing nanodiamonds via detonation process using aromatic compound as group IV element source

Optical properties of negatively charged germanium-vacancy centers in detonation nanodiamonds with an average single-digit nanometer particle size

Synthesis of Loose Nanodiamonds Containing Nitrogen-Vacancy Centers for Magnetic and Thermal Sensing

The Anomalous Formation of Irradiation Induced Nitrogen-Vacancy Centers in 5-Nanometer-Sized Detonation Nanodiamonds

Fabrication of Diamond Nanoneedle Arrays Containing High‐Brightness Silicon‐Vacancy Centers

Spatially controlled fabrication of a bright fluorescent nanodiamond-array with enhanced far-red Si-V luminescence

Ultrathin Nanocrystalline Diamond Films with Silicon Vacancy Color Centers via Seeding by 2 nm Detonation Nanodiamonds

Fabrication of high-density nitrogen-vacancy (NV) center-enriched diamond particles through methyl trityl amine (C20H19N) seeding

High-Throughput Detection and Manipulation of Single Nitrogen-Vacancy Center's Charge in Nanodiamonds

Large-scale Fabrication of High-Density Silicon-vacancy Centers via Helium-ion Implantation of Diamond Nucleation Surface

Narrowband fluorescent nanodiamonds produced from chemical vapor deposition films

Simple Synthesis of Ultra-Small Nanodiamonds with Tunable Size and Photoluminescence

Silicon-Vacancy Nanodiamonds as High Performance Near-Infrared Emitters for Live-Cell Dual-Color Imaging and Thermometry

Enhancing nanodiamond sensors

Si and N - vacancy color centers in discrete diamond nanoparticles: Raman and fluorescence spectroscopic studies

Creation, Control, and Modeling of NV Centers in Nanodiamonds

Evaluation of single silicon vacancy centers in nanodiamonds created by ion implantation at cryogenic temperatures

Vacancy–impurity centers in diamond: prospects for synthesis and applications

Surface optimization of nanodiamonds using non-thermal plasma

Creation of color centers in diamond by recoil implantation through dielectric films

Creating high density ensembles of nitrogen-vacancy centers in nitrogen-rich type Ib nanodiamonds