High-frequency permeability of porous media with thin constrictions. I. Wedge-shaped porous media

V. Langlois
DOI: https://doi.org/10.1063/5.0086257
IF: 4.6
2022-07-28
Physics of Fluids
Abstract:In this series of publications, the high-frequency behavior of the dynamic permeability of porous media with thin constriction is investigated. In Part I, the classical theory of Johnson et al. ["Theory of dynamic permeability and tortuosity in fluid saturated porous media," J. Fluid Mech. 176 , 379 (1987)] for soft-curved pore geometries is recalled. For wedge-shaped pore geometries, numerical computations (by finite element method) and analysis by Cortis et al. ["Influence of pore roughness on high-frequency permeability," Phys. Fluids 15 , 1766 (2003)] are revisited and confirmed, while leading to important new conclusions. Because the electric field is singular at the tip of wedges, the original model developed by Johnson et al. , which links the viscous fluid flow problem to the electrical conduction problem, is inappropriate for describing the high-frequency behavior of the viscous fluid flow through wedge-shaped porous media. In particular, in the case of small wedge angles, we show that the real part of the dynamic permeability behaves in the high-frequency regime as R(k(ω))∝ω−(3/2)(ln (ω)+constant) , which differs from the predictions of the Johnson et al. model [ R(k(ω))∝ω−(3/2) ]. However, our results show that the classical Johnson et al. high frequency limit can be a good approximation of the viscous fluid flow if the electrical conduction problem is solved over a fluid domain truncated by a boundary layer having a thickness comparable to the viscous skin depth. In Part II, we consider foam with perforated membranes involving different microstructural characteristic lengths: pore size, membrane aperture size, and membrane thickness. We assess the validity domain of the Johnson et al. approximation and test our modified high-frequency approximation for such porous materials.
mechanics,physics, fluids & plasmas
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