Artificial intelligence on a resistive RAM chip

Stuart Thomas
DOI: https://doi.org/10.1038/s41928-022-00846-3
IF: 33.255
2022-09-23
Nature Electronics
Abstract:The researchers — who are based at Stanford University, the University of California San Diego, the University of Pittsburgh, the University of Notre Dame and Tsinghua University — developed the chip by working on all levels of its design. At the device level, they monolithically integrated 3 million analogue RRAM devices with complementary metal–oxide–semiconductor (CMOS)-based circuits. A compact and energy-efficient voltage-mode neuron circuit was created to allow variable bit-precision computing and analogue-to-digital conversion. At the array level, an architecture was developed to allow control of the dataflow and routing.
engineering, electrical & electronic
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