Strain-insensitive intrinsically stretchable transistors and circuits
Weichen Wang,Sihong Wang,Reza Rastak,Yuto Ochiai,Simiao Niu,Yuanwen Jiang,Prajwal Kammardi Arunachala,Yu Zheng,Jie Xu,Naoji Matsuhisa,Xuzhou Yan,Soon-Ki Kwon,Masashi Miyakawa,Zhitao Zhang,Rui Ning,Amir M. Foudeh,Youngjun Yun,Christian Linder,Jeffrey B.-H. Tok,Zhenan Bao
DOI: https://doi.org/10.1038/s41928-020-00525-1
IF: 33.255
2021-01-25
Nature Electronics
Abstract:<p>Nature Electronics, Published online: 25 January 2021; <a href="https://www.nature.com/articles/s41928-020-00525-1">doi:10.1038/s41928-020-00525-1</a></p>An all-elastomer strain engineering approach, which uses patterned elastomer layers with tunable stiffnesses, can be used to create intrinsically stretchable transistor arrays with a device density of 340 transistors cm–2 and strain insensitivity of less than 5% performance variation when stretched to 100% strain.
engineering, electrical & electronic