Abstract:Currently, the search for efficient materials with desirable optoelectronic and thermoelectric properties for power generation holds great importance. This study investigates the structural, optoelectronic, and thermoelectric properties of potassium tin halide vacancy-ordered double perovskites (K2SnX6) through first-principles computations. Our comprehensive analysis encompasses DFT method of calculation and Boltzmann transport theory. Generalized Gradient Approximation (GGA) with and without mBJ potential is applied, employing LAPW base-set. The electronic analysis reveals that all compounds are direct band gap semiconductors, with band gaps ranging from 1.70 eV to 4.126 eV (using PBESol-mBJGGA), making them promising for solar cells and optoelectronic applications. Optical calculations demonstrate excellent agreement with theoretical band gaps, highlighting their accurate prediction. K2SnI6 exhibits superior light absorption in the visible range compared to K2SnCl6 due to its narrower band gap, making it a suitable material for solar cells. The refractive index analysis confirms their viability for solar applications. Regarding thermoelectric properties, iodine substitution increases electric conductivity, while phonon heat transfer diminishes with temperature. The compounds display p-type conductivity, and the power factor values indicate their potential as effective thermoelectric materials. At 500 K, the compounds achieve maximum ZT values of 0.58, 0.69, and 0.50 for K2SnCl6, K2SnBr6, and K2SnI6, respectively. These findings suggest the materials suitability for high-temperature thermoelectric applications

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