Plasmonic Switching in Au-Functionalized GaN Nanowires in the Realm of Surface Plasmon Polariton Propagation: a Single Nanowire Switching Device

Sandip Dhara,Chien-Yao Lu,Kuei-Hsien Chen
DOI: https://doi.org/10.1007/s11468-014-9815-z
IF: 2.726
2014-11-04
Plasmonics
Abstract:Photoresponse of Au nanoparticle functionalized semiconducting GaN (Au-GaN) nanowires is reported for an optical switching using 532 excitation. Wide band gap GaN nanowires are grown by catalyst-assisted chemical vapor deposition technique and functionalized with Au in the chemical route. Au-GaN nanowires show surface plasmon resonance (SPR) mode of Au nanoclusters around 550 nm along with characteristic band for GaN around 365 nm. An optical switching is observed for Au-GaN nanowires with a sub-band gap excitation of 532 nm suggesting possible role of surface plasmon polariton-assisted transport of electron in the system. The role of band conduction is ruled out in the absence of optical switching using 325-nm excitation which is higher in energy that the reported band gap of GaN ∼3.4 eV (365 nm) at room temperature. A finite amount of interband contribution of Au plays an important role along with the interparticle separation. The switching device is also successfully tested for a single GaN nanowire functionalized with Au nanoclusters. A resistivity value of 0.05 Ω-cm is measured for surface plasmon polariton-assisted electrical transport of carrier in the single GaN nanowire.
materials science, multidisciplinary,nanoscience & nanotechnology,chemistry, physical
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