Abstract:In this work, a new Hetero-Stacked Source Dual Metal T-shaped Gate Silicon-on-Insulator (SOI) TFET (HS-DMTG-TFET) is proposed, exhibiting significantly improved DC performance, and switching performance over existing TFET topologies. A low threshold voltage of less than 200 mV in the proposed device allows for its integration in a variety of low-power applications. This device has been proposed in response to an acute need for low-power devices for bio-sensing, in situ memory, and loss-minimized switching. The proposed structure incorporates an overlapped gate pocket with a dual metal molybdenum-aluminum gate. The inclusion of a source side pocket improves the tunneling of charge carriers, which enhances the ON-state current. The Band-to-Band-Tunneling (BTBT) characteristic of TG-TFET in a direction perpendicular to the channel contributes to an elevated ON-current, attributed to a comparatively larger tunneling area. The channel exhibits a vertical U-shape, making the proposed device more scalable as compared to existing TFETs. A series of dimension and material-specific optimizations have been made and showcased in this work along with physical reasoning for the observed improvements. An I ON /I OFF ratio of ~ 10 14 is achieved with an I ON of 1.05 × 10 –3 A/μm and an I OFF of 1.35 × 10 –17 A/μm. A highly reduced sub-threshold slope (lower is better) of 10.7 mV/dec is observed, indicating the good transient performance of the device. Considerable improvement in RF performance of the device has been showcased. The temperature dependence on transfer and RF characteristics has been also analyzed. The exhibited device characteristics indicate the potential of using composite material gates for low-power applications over their conventional single-metal counterparts. Reduced power consumption coupled with a compact device structure results in a minimally invasive device, suitable for low-power wearable sensors and bio-integrable circuits.

Impact of Fe Material Thickness on Performance of Raised Source Overlapped Negative Capacitance Tunnel Field Effect Transistor (NCTFET)

Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current

Optimizing InGaAs/GaAsSb Staggered Bandgap U-Gate Line TFET With p+-Pocket Implant and Negative Capacitance for Enhanced Performance

A T-shaped gate tunneling field effect transistor with negative capacitance, super-steep subthreshold swing

Design Optimization of a Silicon-Germanium Heterojunction Negative Capacitance Gate-All-Around Tunneling Field Effect Transistor based on a Simulation Study

Fully Printed Negative-Capacitance Field-Effect Transistors with Ultralow Subthreshold Swing and High Inverter Signal Gain

Performance Analysis of III-V and IV Semiconductors Based Double Gate Hetero Material Negative Capacitance TFET

High performance tunnel field-effect transistor by gate and source engineering.

Investigation of negative differential resistance on negative capacitance Germanium source vertical TFET

Ferroelectric Negative Capacitance Field Effect Transistor

Drain Source-Engineered Double-Gate Tunnel FET for Improved Performance

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Design, simulation and analog/RF performance evaluation of a hetero-stacked source dual metal T-shaped gate tunnel-FET in thermally variable environments

Negative Capacitance Junctionless FinFET for Low Power Applications: An Innovative Approach

Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET

Negative Capacitance Ferroelectric FET Based on Short Channel Effect for Low Power Applications

Drain-engineered Carbon-Nanotube-film Field-Effect Transistors with High Performance and Ultra-Low Current Leakage

Impact of back gate-drain overlap on DC and analog/HF performance of a ferroelectric negative capacitance double gate TFET

OFF Current Reduction in Negative Capacitance Heterojunction TFET

Design and Simulation-Based Analysis of Triple Metal Gate with Ferroelectric-SiGe Heterojunction Based Vertical TFET for Performance Enhancement