Efficient Photoelectrochemical Water Oxidation by Metal-Doped Bismuth Vanadate Photoanode with Iron Oxyhydroxide Electrocatalyst

Eun Jin Joo,Gisang Park,Ji Seon Gwak,Jong Hyeok Seo,Kyu Yeon Jang,Kyung Hee Oh,Ki Min Nam
DOI: https://doi.org/10.1155/2016/1827151
IF: 3.791
2016-01-01
Journal of Nanomaterials
Abstract:Intensive attention has been currently focused on the discovery of semiconductor and proficient cocatalysts for eventual applications to the photoelectrochemical water splitting system. A W-Mo-doped BiVO 4 semiconductor was prepared by the surfactant-assisted thermal decomposition method on a fluorine-doped tin oxide conductive film. The W-Mo-doped BiVO 4 films showed a porous morphology with the grain sizes of about 270 nm. Because the hole diffusion length of BiVO 4 is about 100 nm, the W-Mo-doped BiVO 4 film in this study is an ideal candidate for the photoelectrochemical water oxidation. Iron oxyhydroxide (FeOOH) electrocatalyst was chemically deposited on the W-Mo-doped BiVO 4 to investigate the effect of the electrocatalyst on the semiconductor. The W-Mo-doped BiVO 4 /FeOOH composite electrode showed enhanced activity compared to the pristine W-Mo-doped BiVO 4 electrode for water oxidation reaction. The chemical deposition is a promising method for the deposition of FeOOH on semiconductor.
materials science, multidisciplinary,nanoscience & nanotechnology
What problem does this paper attempt to address?