Abstract:Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions (TJs) with ferromagnetic (FM) electrodes and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. The CIS effect is here studied in TJs with two thin (20 Å) non-magnetic (NM) Ta electrodes inserted above and below the insulating barrier. We observe resistance (R) switching for positive applied electrical current (flowing from the bottom to the top lead), characterized by a continuous resistance decrease and associated with current-driven displacement of metallic ions from the bottom electrode into the barrier (thin barrier state). For negative currents, displaced ions return into their initial positions in the electrode and the electrical resistance gradually increases (thick barrier state). We measured the temperature (T) dependence of the electrical resistance of both thin- and thick-barrier states ($R_b$ and R$_B$ respectively). Experiments showed a weaker R(T) variation when the tunnel junction is in the $R_b$ state, associated with a smaller tunnel contribution. By applying large enough electrical currents we induced large irreversible R-decreases in the studied TJs, associated with barrier degradation. We then monitored the evolution of the R(T) dependence for different stages of barrier degradation. In particular, we observed a smooth transition from tunnel- to metallic-dominated transport. The initial degradation-stages are related to irreversible barrier thickness decreases (without the formation of pinholes). Only for later barrier degradation stages do we have the appearance of metallic paths between the two electrodes that, however, do not lead to metallic dominated transport for small enough pinhole radius.

Observation of fluctuation-induced tunneling conduction in micrometer-sized tunnel junctions

Low-Field Quantum Hall Transport in an Electron Fabry-Perot Interferometer: Dependence of Constriction Filling on Front-Gate Voltage

Low-field Quantum Hall Transport in an Electron Fabry-Perot Interferometer

Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

Direct observation of the thickness distribution of ultra thin AlOx barrier in Al/AlOx/Al Josephson junctions

Electric-field-dependent spectroscopy of charge motion using a single-electron transistor

Applications and non-idealities of submicron Al-AlOx-Nb tunnel junctions

Quantitative Thermal Imaging of Single-Walled Carbon Nanotube Devices by Scanning Joule Expansion Microscopy.

Fluctuation Dominated Josephson Tunneling with a Scanning Tunneling Microscope

Giant current fluctuations in an overheated single electron transistor

Temperature dependance of the tunneling density of states in sub-micron planar metal/oxide/graphene junctions

A Single-Level Tunnel Model to Account for Electrical Transport through Single Molecule- and Self-Assembled Monolayer-based Junctions

Electrical current-driven pinhole formation and insulator-metal transition in tunnel junctions

Tunneling Spectroscopy of Atomically-Thin Al2O3 Films for Tunnel Junctions

Low-Temperature Study of Array of Dopant Atoms on Transport Behaviors in Silicon Junctionless Nanowire Transistor

Visualization of Mesoscopic Conductivity Fluctuations in Amorphous Semiconductor Thin-Film Transistors

Low frequency resistance and critical current fluctuations in Al-based Josephson junctions

Experimental Observation of Thermal Fluctuations in Single Superconducting Pb Nanoparticles Through Tunneling Measurements

Temperature Dependent Charge Transport Across Tunnel Junctions of Single-Molecules and Self-Assembled Monolayers: A Comparative Study

Measurement and Statistical Analysis of Single-Molecule Current-Voltage Characteristics, Transition Voltage Spectroscopy, and Tunneling Barrier Height.

Fabrication of stable and reproducible sub-micron tunnel junctions