Abstract:The acquisition of reliable knowledge about the mechanism of short laser pulse interactions with semiconductor materials is an important step for high-tech technologies towards the development of new electronic devices, the functionalization of material surfaces with predesigned optical properties, and the manufacturing of nanorobots (such as nanoparticles) for bio-medical applications. The laser-induced nanostructuring of semiconductors, however, is a complex phenomenon with several interplaying processes occurring on a wide spatial and temporal scale. In this work, we apply the atomistic-continuum approach for modeling the interaction of an fs-laser pulse with a semiconductor target, using monolithic crystalline silicon (c-Si) and porous silicon (Si). This model addresses the kinetics of non-equilibrium laser-induced phase transitions with atomic resolution via molecular dynamics, whereas the effect of the laser-generated free carriers (electron-hole pairs) is accounted for via the dynamics of their density and temperature. The combined model was applied to study the microscopic mechanism of phase transitions during the laser-induced melting and ablation of monolithic crystalline (c-Si) and porous Si targets in a vacuum. The melting thresholds for the monolithic and porous targets were found to be 0.32 J/cm2 and 0.29 J/cm2, respectively. The limited heat conduction mechanism and the absence of internal stress accumulation were found to be involved in the processes responsible for the lowering of the melting threshold in the porous target. The results of this modeling were validated by comparing the melting thresholds obtained in the simulations to the experimental values. A difference in the mechanisms of ablation of the c-Si and porous Si targets was considered. Based on the simulation results, a prediction regarding the mechanism of the laser-assisted production of Si nanoparticles with the desired properties is drawn.

Ultrafast laser heating of non-plasmonic nanocylinders

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Numerical Simulations of Germanium Nanofilm under Femtosecond Pulse Laser Heating

Imaging and Controlling Ultrafast Electron Pulses Emitted from Plasmonic Nanostructures

Numerical Analysis of Ultrashort Pulse Laser-Induced Thermomechanical Response of Germanium Thin Films

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

Micro- and Nanoscale Heat Transfer in Femtosecond Laser Processing of Metals

Modelling ultrafast non-equilibrium carrier dynamics and relaxation processes upon irradiation of hexagonal Silicon-Carbide with femtosecond laser pulses

Modeling of Short-Pulse Laser Interactions with Monolithic and Porous Silicon Targets with an Atomistic-Continuum Approach

Unified theoretical description of thermal and nonthermal laser-induced ultrafast structural changes in solids

Ultra-Short Pulses Laser Heating of Dielectrics: A Semi-Classical Analytical Model

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

Visualizing plasmons and ultrafast kinetic instabilities in laser-driven solids using X-ray scattering

Non-Fourier heat transport in metal-dielectric core-shell nanoparticles under ultrafast laser pulse excitation

Lattice Boltzmann Modeling of Ultra-fast Laser Heating

Atomistic-continuum modeling of short laser pulse melting of Si targets

Ultrafast Laser Material Damage Simulation—A New Look at an Old Problem

Fast collisional electron heating and relaxation in thin foils driven by a circularly polarized ultraintense short-pulse laser

Ultrafast energy absorption and photoexcitation of bulk plasmon in crystalline silicon subjected to intense near-infrared ultrashort laser pulses

Ultrafast lattice deformations studied by means of time-resolved electron and x-ray diffraction

Ultrafast Structural Dynamics of Nanoparticles in Intense Laser Fields